![NCE3050, Транзистор MOSFET N-канал 30V 50A [TO-220]](/wa-data/public/shop/products/34/17/211734/images/243267/243267.0x320.jpg "NCE3050, Транзистор MOSFET N-канал 30V 50A [TO-220]")
com Pb Free Product NCE3050 NCE N-Channel Enhancement Mod e Power MOSFET Description The NCE3050 uses advanced trench technology and des ign to provide excellent RDS(ON) with l ow gate charge.
It can be used in a wid e variety of applications.
General Fea tures
• VDS =30V,ID =50A RDS(ON) < 9m Ω @ VGS=10V RDS(ON) < 15mΩ @ VGS=4.
5V Schematic diagram
• High density cell design for ultra low Rdson
• Fu lly characterized avalanche voltage and current
• Good stability and uniform ity with high EAS
• Excellent package for good heat dissipation
• Special process technology for high ES .
130 ₽
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![2SB772, Транзистор биполярный, PNP, Ic=-3А, Vceo=-30В, Vcbo=-40В, Pd=10Вт [TO-126]](/wa-data/public/shop/products/18/44/184418/images/220646/220646.0x320.jpg "2SB772, Транзистор биполярный, PNP, Ic=-3А, Vceo=-30В, Vcbo=-40В, Pd=10Вт [TO-126]")
VFD015M21A (1,5kW 220V) Преобразователь частоты
10 100 ₽
MAX4580EAE+
– 41%
7 190 ₽
![NCE3050, Транзистор MOSFET N-канал 30V 50A [TO-220]](/wa-data/public/shop/products/34/17/211734/images/243267/243267.300x0.jpg "NCE3050, Транзистор MOSFET N-канал 30V 50A [TO-220]")
![KBP210 (RS207), Диодный мост 2А 1000В [KBP]](/wa-data/public/shop/products/33/37/123733/images/155187/155187.300x0.jpg "KBP210 (RS207), Диодный мост 2А 1000В [KBP]")
![2SB772, Транзистор биполярный, PNP, Ic=-3А, Vceo=-30В, Vcbo=-40В, Pd=10Вт [TO-126]](/wa-data/public/shop/products/18/44/184418/images/220646/220646.300x0.jpg "2SB772, Транзистор биполярный, PNP, Ic=-3А, Vceo=-30В, Vcbo=-40В, Pd=10Вт [TO-126]")
