SSM3J325F,LF
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Semiconductors\Discrete Semiconductors\Transistors\MOSFETКанал P 20V 2A (Ta) 600 мВт (Ta) S-Mini для поверхностного монтажа
| Основные | |
| вес, г | 0.01 |
| moisture sensitivity level (msl) | 1 (Unlimited) |
| mounting type | Surface Mount |
| operating temperature | 150В°C (TJ) |
| package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| package / case | SOT-346-3 |
| rohs status | RoHS Compliant |
| eccn | EAR99 |
| htsus | 8541.21.0095 |
| supplier device package | S-Mini |
| minimum operating temperature | -55 C |
| factory pack quantity | 3000 |
| manufacturer | Toshiba |
| maximum operating temperature | +150 C |
| mounting style | SMD/SMT |
| packaging | Cut Tape or Reel |
| product category | MOSFET |
| product type | MOSFET |
| series | SSM3J325 |
| subcategory | MOSFETs |
| base product number | TLP2745 -> |
| configuration | Single |
| factory pack quantity: factory pack quantity: | 3000 |
| manufacturer: | Toshiba |
| maximum operating temperature: | +150 C |
| minimum operating temperature: | -55 C |
| mounting style: | SMD/SMT |
| product category: | MOSFET |
| product type: | MOSFET |
| series: | SSM3J325 |
| subcategory: | MOSFETs |
| packaging: | Reel, Cut Tape, MouseReel |
| number of channels | 1 Channel |
| Вес и габариты | |
| package/case: | SOT-346-3 |
| tradename: | U-MOSVI |
| tradename | U-MOSVI |
| pd - power dissipation: | 600 mW |
| technology | Si |
| number of channels: | 1 Channel |
| pd - power dissipation | 600 mW |
| technology: | Si |
| configuration: | Single |
| current - continuous drain (id) @ 25в°c | 2A (Ta) |
| drain to source voltage (vdss) | 20V |
| drive voltage (max rds on, min rds on) | 1.5V, 4.5V |
| fet type | P-Channel |
| gate charge (qg) (max) @ vgs | 4.6nC @ 4.5V |
| input capacitance (ciss) (max) @ vds | 270pF @ 10V |
| power dissipation (max) | 600mW (Ta) |
| rds on (max) @ id, vgs | 150mOhm @ 1A, 4.5V |
| vgs (max) | В±8V |
| rds on - drain-source resistance | 311 mOhms |
| transistor polarity | P-Channel |
| vds - drain-source breakdown voltage | 20 V |
| vgs - gate-source voltage | 8 V |
| id - continuous drain current | 2 A |
| forward transconductance - min | 4.4 S |
| qg - gate charge | 4.6 nC |
| transistor type | 1 P-Channel |
| vgs th - gate-source threshold voltage | 1 V |
| channel mode: | Enhancement |
| id - continuous drain current: | 2 A |
| qg - gate charge: | 4.6 nC |
| rds on - drain-source resistance: | 311 mOhms |
| transistor polarity: | P-Channel |
| transistor type: | 1 P-Channel |
| vds - drain-source breakdown voltage: | 20 V |
| vgs - gate-source voltage: | -8 V, +8 V |
| vgs th - gate-source threshold voltage: | 1 V |
| forward transconductance - min: | 4.4 S |
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Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26
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