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com Pb Free Product NCE3050 NCE N-Channel Enhancement Mod e Power MOSFET Description The NCE3050 uses advanced trench technology and des ign to provide excellent RDS(ON) with l ow gate charge.
It can be used in a wid e variety of applications.
General Fea tures
• VDS =30V,ID =50A RDS(ON) < 9m Ω @ VGS=10V RDS(ON) < 15mΩ @ VGS=4.
5V Schematic diagram
• High density cell design for ultra low Rdson
• Fu lly characterized avalanche voltage and current
• Good stability and uniform ity with high EAS
• Excellent package for good heat dissipation
• Special process technology for high ES .
It can be used in a wid e variety of applications.
General Fea tures
• VDS =30V,ID =50A RDS(ON) < 9m Ω @ VGS=10V RDS(ON) < 15mΩ @ VGS=4.
5V Schematic diagram
• High density cell design for ultra low Rdson
• Fu lly characterized avalanche voltage and current
• Good stability and uniform ity with high EAS
• Excellent package for good heat dissipation
• Special process technology for high ES .
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