Электронные компоненты SI2308BDS-T1-GE3, MOSFET 60V Vds 20V Vgs SOT-23 купить в наличии в интернет-магазине ООО «Телеметрия»

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Semiconductors\Discrete Semiconductors\Transistors\MOSFETSI2 Series TrenchFET® Power MOSFETs Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V (ds) and are 100% tested gate resistance(R g ). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55 C to 150 C junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Основные
вес, г	0.01
package / case	SOT-23-3
minimum operating temperature	-55 C
factory pack quantity	3000
manufacturer	Vishay
maximum operating temperature	+150 C
mounting style	SMD/SMT
packaging	Cut Tape or Reel
product category	MOSFET
product type	MOSFET
series	SI2
subcategory	MOSFETs
configuration	Single
fall time	7 ns
rise time	10 ns
factory pack quantity: factory pack quantity:	3000
manufacturer:	Vishay
maximum operating temperature:	+150 C
minimum operating temperature:	-55 C
mounting style:	SMD/SMT
product category:	MOSFET
product type:	MOSFET
series:	SI2
subcategory:	MOSFETs
packaging:	Reel, Cut Tape, MouseReel
part # aliases:	SI2308BDS-T1-BE3 SI2308BDS-GE3
number of channels	1 Channel
Вес и габариты
package/case:	SOT-23-3
tradename:	TrenchFET
tradename	TrenchFET
pd - power dissipation:	1.66 W
part # aliases	SI2308BDS-E3
technology	Si
number of channels:	1 Channel
pd - power dissipation	1.66 W
technology:	Si
configuration:	Single
channel mode	Enhancement
rds on - drain-source resistance	156 mOhms
transistor polarity	N-Channel
vds - drain-source breakdown voltage	60 V
vgs - gate-source voltage	10 V
id - continuous drain current	2.3 A
typical turn-on delay time	4 ns
typical turn-off delay time	10 ns
forward transconductance - min	5 S
qg - gate charge	6.8 nC
transistor type	1 N-Channel
vgs th - gate-source threshold voltage	1 V
channel mode:	Enhancement
id - continuous drain current:	2.3 A
qg - gate charge:	2.3 nC
rds on - drain-source resistance:	156 mOhms
transistor polarity:	N-Channel
transistor type:	1 N-Channel
vds - drain-source breakdown voltage:	60 V
vgs - gate-source voltage:	-20 V, +20 V
vgs th - gate-source threshold voltage:	3 V
typical turn-off delay time:	10 ns
typical turn-on delay time:	4 ns
fall time:	7 ns
rise time:	10 ns

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Название организации: ООО "ТЕЛЕМЕТРИЯ"
Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38
ИНН 7536172565
КПП 381201001
ОГРН 1187536004215
Расчетный счет 40702810010000426573
Банк АО «Тинькофф Банк»
БИК банка 044525974
ИНН банка 7710140679
Корреспондентский счет банка 30101810145250000974
Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26

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