IRFR110TRPBF, Силовой МОП-транзистор, N Канал, 100 В, 4.3 А, 0.54 Ом, TO-252AA, Surface Mount

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Артикул: IRFR110TRPBF
Основные
вес, г1
pin count3
packagingTape and Reel
product categoryPower MOSFET
300
+
Бонус: 6 !
Бонусная программа
Итого: 300
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Основные
вес, г1
pin count3
packagingTape and Reel
product categoryPower MOSFET
automotiveNo
eu rohsCompliant with Exemption
maximum operating temperature (°c)150
mountingSurface Mount
part statusActive
pcb changed2
standard package nameTO-252
supplier packageDPAK
eccn (us)EAR99
maximum power dissipation (mw)2500
minimum operating temperature (°c)-55
configurationSingle Dual Drain
hts8541.29.00.95
package height2.39(Max)
package length6.73(Max)
package width6.22(Max)
Вес и габариты
number of elements per chip1
channel typeN
tabTab
channel modeEnhancement
maximum continuous drain current (a)4.3
maximum drain source resistance (mohm)540@10V
maximum drain source voltage (v)100
maximum gate source leakage current (na)100
maximum gate source voltage (v)±20
maximum gate threshold voltage (v)4
maximum idss (ua)25
typical fall time (ns)9.4
typical gate charge @ 10v (nc)8.3(Max)
typical gate charge @ vgs (nc)8.3(Max)@10V
typical input capacitance @ vds (pf)180@25V
typical rise time (ns)16
typical turn-off delay time (ns)15
typical turn-on delay time (ns)6.9
militaryNo
rds on - drain-source resistance540mО© @ 2.6A,10V
transistor polarityN Channel
vds - drain-source breakdown voltage100V
vgs - gate-source voltage4V @ 250uA
continuous drain current (id) @ 25в°c4.3A(Tc)
power dissipation-max (ta=25в°c)25W(Tc)
operating junction temperature (°c)-55 to 150
maximum diode forward voltage (v)2.5
maximum positive gate source voltage (v)20
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