CSD25501F3, MOSFET -20-V, P channel NexFET power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate E

Semiconductors\Discrete Semiconductors\Transistors\MOSFETCSD25501F3 –20V 64mΩ, P-Channel FemtoFET™ MOSFET Texas Instruments CSD25501F3 -20V 64mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. The integrated 10kΩ clamp resistor (RC) allows the gate voltage (VGS) to be operated above the maximum internal gate oxide value of -6V, depending on duty cycle. The gate leakage (IGSS) through the diode increases as VGS is increased above -6V.