Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал, 1000 В, 2,3 А (Tc), 42 Вт (Tc), сквозное отверстие, изоляция TO-220

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Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	2.3A (Tc)
drain to source voltage (vdss)	1000V

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал, 1000 В, 2,3 А (Tc), 42 Вт (Tc), сквозное отверстие, изоляция TO-220

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	2.3A (Tc)
drain to source voltage (vdss)	1000V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	33.4nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	1830pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-220-3 Full Pack, Isolated Tab
power dissipation (max)	42W (Tc)
rds on (max) @ id, vgs	2.8Ohm @ 2.5A, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
series	HiPerFETв„ў, PolarP2в„ў ->
supplier device package	TO-220 Isolated Tab
technology	MOSFET (Metal Oxide)
vgs (max)	В±30V
vgs(th) (max) @ id	6V @ 250ВµA

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