CSD18531Q5A, Транзистор N-MOSFET, полевой, 60В, 100А, 156Вт, VSONP8 5x6мм

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Артикул: CSD18531Q5A
Основные
вес, г1
mounting typeSurface Mount
package / caseVSONP-8
length6 mm
430
+
Бонус: 8.6 !
Бонусная программа
Итого: 430
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Основные
вес, г1
mounting typeSurface Mount
package / caseVSONP-8
length6 mm
package typeSON
minimum operating temperature- 55 C
width4.9 mm
pin count8
factory pack quantity2500
manufacturerTexas Instruments
maximum operating temperature+ 150 C
mounting styleSMD/SMT
packagingCut Tape or Reel
product categoryMOSFET
product typeMOSFET
seriesCSD18531Q5A
subcategoryMOSFETs
configurationSingle
fall time2.7 ns
rise time7.8 ns
height1 mm
number of channels1 Channel
Вес и габариты
tradenameNexFET
number of elements per chip1
channel typeN
technologySi
development kitDRV8711EVM
pd - power dissipation156 W
transistor configurationSingle
maximum drain source voltage60 V
maximum gate source voltage-20 V, +20 V
maximum continuous drain current134 A
transistor materialSi
maximum gate threshold voltage2.3V
maximum drain source resistance5.8 mΩ
channel modeEnhancement
minimum gate threshold voltage1.5V
rds on - drain-source resistance4.6 mOhms
transistor polarityN-Channel
vds - drain-source breakdown voltage60 V
vgs - gate-source voltage10 V
id - continuous drain current100 A
maximum power dissipation3.1 W
typical gate charge @ vgs18 nC 4.5 V
typical turn-on delay time4.4 ns
typical turn-off delay time20 ns
qg - gate charge36 nC
transistor type1 N-Channel Power MOSFET
vgs th - gate-source threshold voltage1.5 V
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