| Основные | |
| вес, г | 38 |
| mounting type | Through Hole |
| package / case | TO-247AC-3 |
| length | 15.87mm |
| package type | TO-247AC |
| minimum operating temperature | -55 C |
| width | 5.31mm |
| pin count | 3 |
| factory pack quantity | 500 |
| manufacturer | Vishay |
| maximum operating temperature | +150 C |
| mounting style | Through Hole |
| packaging | Tube |
| product category | MOSFET |
| product type | MOSFET |
| series | E |
| subcategory | MOSFETs |
| eu rohs | Compliant with Exemption |
| lead shape | Through Hole |
| maximum operating temperature (°c) | 150 |
| mounting | Through Hole |
| part status | active |
| pcb changed | 3 |
| standard package name | TO-247 |
| supplier package | TO-247AC |
| eccn (us) | ear99 |
| maximum power dissipation (mw) | 250000 |
| minimum operating temperature (°c) | -55 |
| configuration | Single |
| fall time | 36 ns |
| rise time | 32 ns |
| factory pack quantity: factory pack quantity: | 500 |
| manufacturer: | Vishay |
| maximum operating temperature: | +150 C |
| minimum operating temperature: | -55 C |
| mounting style: | Through Hole |
| product category: | MOSFET |
| product type: | MOSFET |
| series: | E |
| subcategory: | MOSFETs |
| packaging: | Tube |
| height | 20.82mm |
| number of channels | 1 Channel |
| hts | 8541.29.00.95 |
| package height | 20.82(Max) |
| package length | 15.87(Max) |
| package width | 5.31(Max) |
| Вес и габариты | |
| package/case: | TO-247-3 |
| number of elements per chip | 1 |
| channel type | N |
| pd - power dissipation: | 250 W |
| technology | Si |
| number of channels: | 1 Channel |
| pd - power dissipation | 250 W |
| tab | Tab |
| technology: | Si |
| configuration: | Single |
| transistor configuration | Single |
| maximum drain source voltage | 600 V |
| maximum gate source voltage | -20 V, +20 V |
| maximum continuous drain current | 29 A |
| transistor material | Si |
| maximum drain source resistance | 125 mΩ |
| channel mode | Enhancement |
| maximum continuous drain current (a) | 29 |
| maximum drain source resistance (mohm) | 125@10V |
| maximum drain source voltage (v) | 600 |
| maximum gate source voltage (v) | ±20 |
| typical fall time (ns) | 36 |
| typical gate charge @ 10v (nc) | 85 |
| typical gate charge @ vgs (nc) | 85@10V |
| typical input capacitance @ vds (pf) | 2600@100V |
| typical rise time (ns) | 32 |
| typical turn-off delay time (ns) | 63 |
| typical turn-on delay time (ns) | 19 |
| minimum gate threshold voltage | 2V |
| military | No |
| rds on - drain-source resistance | 125 mOhms |
| transistor polarity | N-Channel |
| vds - drain-source breakdown voltage | 600 V |
| vgs - gate-source voltage | 30 V |
| id - continuous drain current | 29 A |
| maximum power dissipation | 250 W |
| typical gate charge @ vgs | 85 nC @ 10 V |
| typical turn-on delay time | 19 ns |
| typical turn-off delay time | 63 ns |
| qg - gate charge | 85 nC |
| vgs th - gate-source threshold voltage | 4 V |
| channel mode: | Enhancement |
| id - continuous drain current: | 29 A |
| qg - gate charge: | 85 nC |
| rds on - drain-source resistance: | 125 mOhms |
| transistor polarity: | N-Channel |
| vds - drain-source breakdown voltage: | 600 V |
| vgs - gate-source voltage: | -30 V, +30 V |
| vgs th - gate-source threshold voltage: | 4 V |
| typical turn-off delay time: | 63 ns |
| typical turn-on delay time: | 19 ns |
| fall time: | 36 ns |
| rise time: | 32 ns |
