SI3457CDV-T1-GE3, Транзистор P-MOSFET, полевой, -30В, -4,1А, 2Вт, TSOP6

Si3 TrenchFET® Power MOSFETsVishay / Siliconix Si3 TrenchFET® Power MOSFETs are available in N-channel, P-channel, and N- and P-channel versions. These Si3 MOSFETs are also offered in different V GS and V DS ranges. Vishay / Siliconix Si3 TrenchFET Power MOSFETs operate in an enhancement mode and offer ultra-low R DS(ON) for high efficiency. The series incorporates Si technology and operates at a temperature range of -55°C to 150°C. Typical applications include load switches and DC to DC converters.

Подробное описание

Основные
вес, г	0.1
pin count	6
packaging	Tape and Reel
product category	Power MOSFET

Все характеристики

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Реквизиты

Основные
вес, г	0.1
pin count	6
packaging	Tape and Reel
product category	Power MOSFET
automotive	No
eu rohs	compliant
lead shape	Gull-wing
maximum operating temperature (°c)	150
mounting	surface mount
part status	active
pcb changed	6
ppap	No
standard package name	SOP
supplier package	TSOP
eccn (us)	ear99
maximum power dissipation (mw)	2000
minimum operating temperature (°c)	-55
configuration	Single Quad Drain
factory pack quantity: factory pack quantity:	3000
manufacturer:	Vishay
maximum operating temperature:	+150 C
minimum operating temperature:	-55 C
mounting style:	SMD/SMT
product category:	MOSFET
product type:	MOSFET
series:	SI3
subcategory:	MOSFETs
packaging:	Reel, Cut Tape, MouseReel
part # aliases:	SI3457CDV-T1-BE3 SI3457BDV-T1-E3-S
process technology	TrenchFET
Вес и габариты
package/case:	TSOP-6
tradename:	TrenchFET
number of elements per chip	1
channel type	P
pd - power dissipation:	3 W
number of channels:	1 Channel
technology:	Si
configuration:	Single
channel mode	Enhancement
maximum continuous drain current (a)	4.1
maximum drain source resistance (mohm)	74 10V
maximum drain source voltage (v)	30
maximum gate source leakage current (na)	100
maximum gate source voltage (v)	±20
maximum gate threshold voltage (v)	3
maximum idss (ua)	1
typical fall time (ns)	12
typical gate charge @ 10v (nc)	10
typical gate charge @ vgs (nc)	10 10V\|5.1 4.5V
typical input capacitance @ vds (pf)	450 15V
typical rise time (ns)	80
typical turn-off delay time (ns)	20
typical turn-on delay time (ns)	40
channel mode:	Enhancement
id - continuous drain current:	5.1 A
qg - gate charge:	15 nC
rds on - drain-source resistance:	74 mOhms
transistor polarity:	P-Channel
transistor type:	1 P-Channel
vds - drain-source breakdown voltage:	30 V
vgs - gate-source voltage:	-20 V, +20 V
vgs th - gate-source threshold voltage:	3 V
typical turn-off delay time:	20 ns
typical turn-on delay time:	5 ns
fall time:	10 ns
rise time:	13 ns

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Название организации: ООО "ТЕЛЕМЕТРИЯ"
Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38
ИНН 7536172565
КПП 381201001
ОГРН 1187536004215
Расчетный счет 40702810010000426573
Банк АО «Тинькофф Банк»
БИК банка 044525974
ИНН банка 7710140679
Корреспондентский счет банка 30101810145250000974
Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26

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