TK40A10N1,S4X, MOSFET MOSFET NCh6.8ohm VGS10V10uAVDS100V

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Артикул: TK40A10N1,S4X
Semiconductors\Discrete Semiconductors\Transistors\MOSFETU-MOSVIII-H Low Voltage High Efficiency MOSFETsToshiba U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are specifically designed for use in the secondary side of AC-DC power supplies for notebook PC adapters, game consoles, servers, desktop PCs, flat-panel displays, and more. They are also designed for use in DC-DC power supplies for communication equipment, servers, and data centers. Toshiba U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are...
Основные
вес, г2
factory pack quantity: factory pack quantity:50
manufacturer:Toshiba
maximum operating temperature:+150 C
560
+
Бонус: 11.2 !
Бонусная программа
Итого: 560
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Semiconductors\Discrete Semiconductors\Transistors\MOSFETU-MOSVIII-H Low Voltage High Efficiency MOSFETsToshiba U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are specifically designed for use in the secondary side of AC-DC power supplies for notebook PC adapters, game consoles, servers, desktop PCs, flat-panel displays, and more. They are also designed for use in DC-DC power supplies for communication equipment, servers, and data centers. Toshiba U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are fabricated with the latest Gen 8 trench MOS process, which helps to improve the efficiency of power supplies. Other features include low drain-source on-resistance, low leakage current, and high avalanche ruggedness. The series also includes automotive-qualified MOSFETs in a small package.
Основные
вес, г2
factory pack quantity: factory pack quantity:50
manufacturer:Toshiba
maximum operating temperature:+150 C
minimum operating temperature:-55 C
mounting style:Through Hole
product category:MOSFET
product type:MOSFET
series:TK40A10N1
subcategory:MOSFETs
packaging:Tube
Вес и габариты
package/case:TO-220-3
tradename:U-MOSVIII-H
pd - power dissipation:35 W
number of channels:1 Channel
technology:Si
configuration:Single
channel mode:Enhancement
id - continuous drain current:40 A
qg - gate charge:49 nC
rds on - drain-source resistance:6.8 mOhms
transistor polarity:N-Channel
transistor type:1 N-Channel
vds - drain-source breakdown voltage:100 V
vgs - gate-source voltage:-20 V, +20 V
vgs th - gate-source threshold voltage:4 V
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