Semiconductors\Discrete Semiconductors\Transistors\MOSFETN-канал 60 В 400 мА (Ta) 320 мВт (Ta) поверхностный монтаж SOT-23-3

Подробное описание

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®

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Semiconductors\Discrete Semiconductors\Transistors\MOSFETN-канал 60 В 400 мА (Ta) 320 мВт (Ta) поверхностный монтаж SOT-23-3

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	TO-236-3, SC-59, SOT-23-3
rohs status	RoHS Compliant
eccn	EAR99
htsus	8541.21.0095
supplier device package	SOT-23-3
series	U-MOSVII-H ->
base product number	TLP170 ->
Вес и габариты
technology	MOSFET (Metal Oxide)
current - continuous drain (id) @ 25в°c	400mA (Ta)
drain to source voltage (vdss)	60V
drive voltage (max rds on, min rds on)	4.5V, 10V
fet type	N-Channel
gate charge (qg) (max) @ vgs	0.6nC @ 4.5V
input capacitance (ciss) (max) @ vds	40pF @ 10V
power dissipation (max)	320mW (Ta)
rds on (max) @ id, vgs	1.5Ohm @ 100mA, 10V
vgs (max)	В±20V
vgs(th) (max) @ id	2.1V @ 250ВµA
rds on - drain-source resistance	1.5О© @ 100mA,10V
transistor polarity	N Channel
vds - drain-source breakdown voltage	60V
vgs - gate-source voltage	2.1V @ 250uA
continuous drain current (id) @ 25в°c	400mA
power dissipation-max (ta=25в°c)	320mW

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