STP11NM60FDFP
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STP11NM60FDFP STMicroelectronics MOSFETs Transistor N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Tube - Arrow.comN-канал, 600 В, 11 А (Tc), 35 Вт (Tc), сквозное отверстие, TO-220FP
| Основные | |
| moisture sensitivity level (msl) | 1 (Unlimited) |
| mounting type | Through Hole |
| package | Tube |
| package / case | TO-220-3 Full Pack |
| rohs status | ROHS3 Compliant |
| eccn | EAR99 |
| htsus | 8541.29.0095 |
| reach status | REACH Unaffected |
| supplier device package | TO-220FP |
| pin count | 3 |
| packaging | Tube |
| product category | Power MOSFET |
| series | FDmeshв„ў -> |
| automotive | No |
| eu rohs | Compliant with Exemption |
| lead shape | Through Hole |
| maximum operating temperature (°c) | 150 |
| mounting | Through Hole |
| part status | Active |
| pcb changed | 3 |
| standard package name | TO-220 |
| supplier package | TO-220FP |
| base product number | STP11 -> |
| eccn (us) | EAR99 |
| maximum power dissipation (mw) | 35000 |
| minimum operating temperature (°c) | -65 |
| configuration | Single |
| factory pack quantity: factory pack quantity: | 1000 |
| manufacturer: | STMicroelectronics |
| maximum operating temperature: | +150 C |
| minimum operating temperature: | -65 C |
| mounting style: | Through Hole |
| product category: | MOSFET |
| product type: | MOSFET |
| series: | STP11NM60FD |
| subcategory: | MOSFETs |
| packaging: | Tube |
| hts | 8541.10.00.80 |
| package height | 16.4(Max) |
| package length | 10.4(Max) |
| package width | 4.6(Max) |
| Вес и габариты | |
| package/case: | TO-220-3 |
| number of elements per chip | 1 |
| channel type | N |
| pd - power dissipation: | 35 W |
| technology | MOSFET (Metal Oxide) |
| number of channels: | 1 Channel |
| other related documents | http://www.st.com/web/catalog/sense_power/FM100/CL |
| tab | Tab |
| technology: | Si |
| configuration: | Single |
| channel mode | Enhancement |
| maximum continuous drain current (a) | 11 |
| maximum drain source resistance (mohm) | 450@10V |
| maximum drain source voltage (v) | 600 |
| maximum gate source voltage (v) | ±30 |
| typical fall time (ns) | 15 |
| typical gate charge @ 10v (nc) | 28 |
| typical gate charge @ vgs (nc) | 28@10V |
| typical input capacitance @ vds (pf) | 900@25V |
| typical rise time (ns) | 16 |
| typical turn-on delay time (ns) | 20 |
| current - continuous drain (id) @ 25в°c | 11A (Tc) |
| drain to source voltage (vdss) | 600V |
| drive voltage (max rds on, min rds on) | 10V |
| fet type | N-Channel |
| gate charge (qg) (max) @ vgs | 40nC @ 10V |
| input capacitance (ciss) (max) @ vds | 900pF @ 25V |
| power dissipation (max) | 35W (Tc) |
| rds on (max) @ id, vgs | 450mOhm @ 5.5A, 10V |
| vgs (max) | В±30V |
| vgs(th) (max) @ id | 5V @ 250ВµA |
| military | No |
| channel mode: | Enhancement |
| id - continuous drain current: | 11 A |
| qg - gate charge: | 40 nC |
| rds on - drain-source resistance: | 450 mOhms |
| transistor polarity: | N-Channel |
| transistor type: | 1 N-Channel |
| vds - drain-source breakdown voltage: | 600 V |
| vgs - gate-source voltage: | -30 V, +30 V |
| vgs th - gate-source threshold voltage: | 3 V |
| typical turn-on delay time: | 20 ns |
| fall time: | 15 ns |
| rise time: | 16 ns |
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Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26
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