STP11NK50ZFP

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Транзисторы и сборки MOSFETкол-во в упаковке: 50, корпус: TO220FPN-канал, 500 В, 10 А (Tc), 30 Вт (Tc), сквозное отверстие, TO-220FP
Основные
вес, г3.144
moisture sensitivity level (msl)1 (Unlimited)
mounting typeThrough Hole
operating temperature-55В°C ~ 150В°C (TJ)
75
+
Бонус: 1.5 !
Бонусная программа
Итого: 75
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Транзисторы и сборки MOSFETкол-во в упаковке: 50, корпус: TO220FPN-канал, 500 В, 10 А (Tc), 30 Вт (Tc), сквозное отверстие, TO-220FP
Основные
вес, г3.144
moisture sensitivity level (msl)1 (Unlimited)
mounting typeThrough Hole
operating temperature-55В°C ~ 150В°C (TJ)
packageTube
package / caseTO-220-3 Full Pack
rohs statusROHS3 Compliant
eccnEAR99
htsus8541.29.0095
reach statusREACH Unaffected
supplier device packageTO-220FP
pin count3
packagingTube
product categoryPower MOSFET
seriesSuperMESHв„ў ->
automotiveNo
eu rohsCompliant with Exemption
lead shapeThrough Hole
maximum operating temperature (°c)150
mountingThrough Hole
part statusActive
pcb changed3
ppapNo
standard package nameTO-220
supplier packageTO-220FP
base product numberSTP11 ->
eccn (us)EAR99
maximum power dissipation (mw)30000
minimum operating temperature (°c)-55
configurationSingle
process technologySuperMESH
Вес и габариты
number of elements per chip1
channel typeN
technologyMOSFET (Metal Oxide)
other related documentshttp://www.st.com/web/catalog/sense_power/FM100/CL
tabTab
channel modeEnhancement
maximum continuous drain current (a)10
maximum drain source resistance (mohm)520 10V
maximum drain source voltage (v)500
maximum gate source leakage current (na)10000
maximum gate source voltage (v)±30
maximum gate threshold voltage (v)4.5
maximum idss (ua)1
typical fall time (ns)15
typical gate charge @ 10v (nc)49
typical gate charge @ vgs (nc)49 10V
typical input capacitance @ vds (pf)1390 25V
typical rise time (ns)18
typical turn-off delay time (ns)41
typical turn-on delay time (ns)14.5
current - continuous drain (id) @ 25в°c10A (Tc)
drain to source voltage (vdss)500V
drive voltage (max rds on, min rds on)10V
fet typeN-Channel
gate charge (qg) (max) @ vgs68nC @ 10V
input capacitance (ciss) (max) @ vds1390pF @ 25V
power dissipation (max)30W (Tc)
rds on (max) @ id, vgs520mOhm @ 4.5A, 10V
vgs (max)В±30V
vgs(th) (max) @ id4.5V @ 100ВµA
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