Semiconductor - Discrete > Transistors > FET - MOSFETN-канал 600V 10A (Tc) 35W (Tc) сквозное отверстие TO-220FP

Подробное описание

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube

140 ₽

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Semiconductor - Discrete > Transistors > FET - MOSFETN-канал 600V 10A (Tc) 35W (Tc) сквозное отверстие TO-220FP

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-220-3 Full Pack
rohs status	ROHS3 Compliant
eccn	EAR99
htsus	8541.29.0095
reach status	REACH Unaffected
supplier device package	TO-220FP
series	SuperMESHв„ў ->
base product number	STP10 ->
Вес и габариты
technology	MOSFET (Metal Oxide)
current - continuous drain (id) @ 25в°c	10A (Tc)
drain to source voltage (vdss)	600V
drive voltage (max rds on, min rds on)	10V
fet type	N-Channel
gate charge (qg) (max) @ vgs	70nC @ 10V
input capacitance (ciss) (max) @ vds	1370pF @ 25V
power dissipation (max)	35W (Tc)
rds on (max) @ id, vgs	750mOhm @ 4.5A, 10V
vgs (max)	В±30V
vgs(th) (max) @ id	4.5V @ 250ВµA
rds on - drain-source resistance	750mО© @ 4.5A,10V
transistor polarity	N Channel
vds - drain-source breakdown voltage	600V
vgs - gate-source voltage	4.5V @ 250uA
continuous drain current (id) @ 25в°c	10A
power dissipation-max (ta=25в°c)	35W

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