Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 600V 20A (Tc) 140W (Tc) сквозное отверстие I2PAK

Подробное описание

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	150В°C (TJ)
package	Tube

1 590 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 600V 20A (Tc) 140W (Tc) сквозное отверстие I2PAK

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	150В°C (TJ)
package	Tube
package / case	TO-262-3 Long Leads, IВІPak, TO-262AA
rohs status	ROHS3 Compliant
eccn	EAR99
htsus	8541.29.0095
supplier device package	I2PAK
series	MDmeshв„ў II ->
base product number	STI26N ->
Вес и габариты
technology	MOSFET (Metal Oxide)
current - continuous drain (id) @ 25в°c	20A (Tc)
drain to source voltage (vdss)	600V
drive voltage (max rds on, min rds on)	10V
fet type	N-Channel
gate charge (qg) (max) @ vgs	60nC @ 10V
input capacitance (ciss) (max) @ vds	1800pF @ 50V
power dissipation (max)	140W (Tc)
rds on (max) @ id, vgs	165mOhm @ 10A, 10V
vgs (max)	В±25V
vgs(th) (max) @ id	4V @ 250ВµA

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