Semiconductors\Discrete Semiconductors\Transistors\MOSFETU-MOSIII MOSFETs Toshiba U-MOSIII MOSFETs are single and dual channel MOSFETs ideal for high-speed switching applications. These MOSFETs offer a low drain to source on-resistance and a low voltage gate drive.

Подробное описание

Основные
вес, г	0.01
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	150В°C

Все характеристики

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Реквизиты

Основные
вес, г	0.01
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	150В°C
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	SOT-563, SOT-666
rohs status	RoHS Compliant
eccn	EAR99
htsus	8541.21.0095
supplier device package	ES6
base product number	2SA1428 ->
factory pack quantity: factory pack quantity:	4000
manufacturer:	Toshiba
maximum operating temperature:	+150 C
minimum operating temperature:	-55 C
mounting style:	SMD/SMT
product category:	MOSFET
product type:	MOSFET
series:	SSM6L14FE
subcategory:	MOSFETs
packaging:	Reel, Cut Tape, MouseReel
Вес и габариты
package/case:	SOT-563-6
tradename:	U-MOSIII/U-MOSV
pd - power dissipation:	150 mW
number of channels:	2 Channel
technology:	Si
configuration:	Dual
current - continuous drain (id) @ 25в°c	800mA (Ta), 720mA (Ta)
drain to source voltage (vdss)	20V
fet type	N and P-Channel
gate charge (qg) (max) @ vgs	2nC, 1.76nC @ 4.5V
input capacitance (ciss) (max) @ vds	90pF, 110pF @ 10V
rds on (max) @ id, vgs	240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V
vgs(th) (max) @ id	1V @ 1mA
channel mode:	Enhancement
id - continuous drain current:	80 mA, 720 mA
qg - gate charge:	2 nC, 1.76 nC
rds on - drain-source resistance:	240 mOhms, 300 mOhms
transistor polarity:	N-Channel, P-Channel
vds - drain-source breakdown voltage:	20 V
vgs - gate-source voltage:	-10 V, +10 V, -8 V, +8 V
vgs th - gate-source threshold voltage:	350 mV, 1 V
power - max	150mW (Ta)
fet feature	Logic Level Gate, 1.5V Drive
typical turn-off delay time:	50 ns, 38 ns
typical turn-on delay time:	18 ns, 11 ns
forward transconductance - min:	1.05 S, 850 mS

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Название организации: ООО "ТЕЛЕМЕТРИЯ"
Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38
ИНН 7536172565
КПП 381201001
ОГРН 1187536004215
Расчетный счет 40702810010000426573
Банк АО «Тинькофф Банк»
БИК банка 044525974
ИНН банка 7710140679
Корреспондентский счет банка 30101810145250000974
Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26

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