SSM6L09FUTE85LF, MOSFET N-Ch P-Ch Sg FET 0.4A -0.2A 30V -30V

Semiconductors\Discrete Semiconductors\Transistors\MOSFETπ-MOS VI MOSFETs Toshiba -MOS VI MOSFETs are Low Voltage Gate Drive devices, offered in both P-channel and N-channel polarity, and in single- and dual-channel variants. These devices provide a high drain current rating, low capacitance, low on-resistance, and fast switching. The -MOS VI MOSFETs drive a 2.5V minimum to 20V maximum gate voltage. The -MOS VI MOSFETs are offered in CST3-3, ES6-6, SOT-323-3, SOT-346-3, SOT-353-5, SOT-363-6, SOT-416-3, SOT-553-5, SOT-723-3, SOT-883-3, and TO-263MOD-3 package types for design flexibility. These small surface-mounted packages are ideal for high-density applications.