SSM6K513NU,LF, MOSFET Small Low ON Resistane MOSFETs

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Артикул: SSM6K513NU,LF
Semiconductors\Discrete Semiconductors\Transistors\MOSFETConfigurable High-Side Power Switch Solution Toshiba TCK401G Driver IC is an active-high MOSFET driver suitable for quick-charging and other applications requiring high current supply. Paired with the SSM6K513NU MOSFET, can create a high-efficiency load switch ideal for mobile and consumer applications, such as wearables and accessories. This combination also helps new products reduce heat from conduction loss by about 40 percent compared to...
Основные
вес, г0.01
factory pack quantity: factory pack quantity:3000
manufacturer:Toshiba
maximum operating temperature:+150 C
140
+
Бонус: 2.8 !
Бонусная программа
Итого: 140
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Semiconductors\Discrete Semiconductors\Transistors\MOSFETConfigurable High-Side Power Switch Solution Toshiba TCK401G Driver IC is an active-high MOSFET driver suitable for quick-charging and other applications requiring high current supply. Paired with the SSM6K513NU MOSFET, can create a high-efficiency load switch ideal for mobile and consumer applications, such as wearables and accessories. This combination also helps new products reduce heat from conduction loss by about 40 percent compared to Toshiba's conventional products. The pairing is ideal for those using USB Type-C™ connectors, making it possible to build a 100W load switch for a power supply circuit in a small space. TCK401G has built-in functions such as overvoltage protection, inrush current reducing, and auto output discharge. The SSM6K513NU MOSFET features the "U-MOSIX-H" trench metal-oxide-semiconductor (MOS) process and has an On-resistance (Rdson) of 6.5mΩ.
Основные
вес, г0.01
factory pack quantity: factory pack quantity:3000
manufacturer:Toshiba
maximum operating temperature:+150 C
minimum operating temperature:-55 C
mounting style:SMD/SMT
product category:MOSFET
product type:MOSFET
series:SSM6K
subcategory:MOSFETs
packaging:Reel, Cut Tape, MouseReel
Вес и габариты
package/case:UDFN-6
tradename:U-MOSIX-H
pd - power dissipation:2.5 W
number of channels:1 Channel
technology:Si
configuration:Single
channel mode:Enhancement
id - continuous drain current:15 A
qg - gate charge:7.5 nC
rds on - drain-source resistance:6.5 mOhms
transistor polarity:N-Channel
transistor type:1 N-Channel
vds - drain-source breakdown voltage:30 V
vgs - gate-source voltage:-20 V, +20 V
vgs th - gate-source threshold voltage:1.1 V
typical turn-off delay time:33 ns
typical turn-on delay time:28 ns
forward transconductance - min:6.8 S
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