SI7615ADN-T1-GE3
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Транзисторы и сборки MOSFETкол-во в упаковке: 1, корпус: POWERPAK12128, АБTrans MOSFET P-CH 20V 35A 8-Pin PowerPAK 1212 T/R
| Основные | |
| вес, г | 0.187 |
| pin count | 8 |
| packaging | Tape and Reel |
| product category | Power MOSFET |
| automotive | No |
| eu rohs | Compliant with Exemption |
| lead shape | No Lead |
| maximum operating temperature (°c) | 150 |
| mounting | Surface Mount |
| part status | Active |
| pcb changed | 8 |
| ppap | No |
| standard package name | PowerPAK 1212 |
| supplier package | PowerPAK 1212 |
| eccn (us) | EAR99 |
| maximum power dissipation (mw) | 3700 |
| minimum operating temperature (°c) | -55 |
| configuration | Single Quad Drain Triple Source |
| process technology | TrenchFET |
| Вес и габариты | |
| number of elements per chip | 1 |
| channel type | P |
| channel mode | Enhancement |
| maximum continuous drain current (a) | 35 |
| maximum drain source resistance (mohm) | 4.4 10V |
| maximum drain source voltage (v) | 20 |
| maximum gate source leakage current (na) | 100 |
| maximum gate source voltage (v) | ±12 |
| maximum gate threshold voltage (v) | 1.5 |
| maximum idss (ua) | 1 |
| typical fall time (ns) | 26 |
| typical gate charge @ 10v (nc) | 122 |
| typical gate charge @ vgs (nc) | 59 4.5V|122 10V |
| typical input capacitance @ vds (pf) | 5590 10V |
| typical rise time (ns) | 40 |
| typical turn-off delay time (ns) | 75 |
| typical turn-on delay time (ns) | 41 |
| operating junction temperature (°c) | -55 to 150 |
| typical output capacitance (pf) | 640 |
| maximum continuous drain current on pcb @ tc=25°c (a) | 22.1 |
| maximum diode forward voltage (v) | 1.1 |
| maximum gate resistance (ohm) | 4 |
| maximum junction ambient thermal resistance on pcb (°c/w) | 81 |
| maximum positive gate source voltage (v) | 12 |
| maximum power dissipation on pcb @ tc=25°c (w) | 3.7 |
| maximum pulsed drain current @ tc=25°c (a) | 80 |
| minimum gate resistance (ohm) | 0.4 |
| minimum gate threshold voltage (v) | 0.4 |
| typical diode forward voltage (v) | 0.72 |
| typical gate plateau voltage (v) | 1.8 |
| typical gate to drain charge (nc) | 14.2 |
| typical gate to source charge (nc) | 9.1 |
| typical reverse recovery charge (nc) | 11 |
| typical reverse recovery time (ns) | 27 |
| typical reverse transfer capacitance @ vds (pf) | 655 10V |
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Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26
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