Diodes, Transistors and Thyristors\FET Transistors\RF MOSFETsTrans RF FET N-CH 65V 5A 3-Pin PowerSO-10RF (Формованный вывод) Трубка

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Diodes, Transistors and Thyristors\FET Transistors\RF MOSFETsTrans RF FET N-CH 65V 5A 3-Pin PowerSO-10RF (Формованный вывод) Трубка

Основные
pin count	3
packaging	Tube
automotive	No
eu rohs	Compliant with Exemption
lead shape	Gull-wing
maximum operating temperature (°c)	165
mounting	Surface Mount
part status	Obsolete
pcb changed	3
ppap	No
standard package name	PowerSO-10RF(Formed lead)
supplier package	PowerSO-10RF(Formed lead)
eccn (us)	EAR99
maximum power dissipation (mw)	79000
minimum operating temperature (°c)	-65
configuration	Single
process technology	LDMOS
Вес и габариты
number of elements per chip	1
channel type	N
maximum frequency (mhz)	1000
channel mode	Enhancement
maximum continuous drain current (a)	5
maximum drain source voltage (v)	65
maximum gate source voltage (v)	15
typical input capacitance @ vds (pf)	59 28V
output power (w)	59(Typ)
typical power gain (db)	17.5
typical reverse transfer capacitance @ vds (pf)	0.8 28V
typical output capacitance @ vds (pf)	28 28V
typical forward transconductance (s)	2.5(Min)
typical drain efficiency (%)	65
maximum vswr	10(Min)

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