CSD23381F4, MOSFET 12V P-CH FemtoFET MOSFET

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Артикул: CSD23381F4
Semiconductors\Discrete Semiconductors\Transistors\MOSFETNexFET™ Power MOSFETsTexas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET...
Основные
вес, г0.01
factory pack quantity: factory pack quantity:3000
manufacturer:Texas Instruments
maximum operating temperature:+150 C
140
+
Бонус: 2.8 !
Бонусная программа
Итого: 140
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Semiconductors\Discrete Semiconductors\Transistors\MOSFETNexFET™ Power MOSFETsTexas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Основные
вес, г0.01
factory pack quantity: factory pack quantity:3000
manufacturer:Texas Instruments
maximum operating temperature:+150 C
minimum operating temperature:-55 C
mounting style:SMD/SMT
product category:MOSFET
product type:MOSFET
series:CSD23381F4
subcategory:MOSFETs
packaging:Reel, Cut Tape, MouseReel
Вес и габариты
package/case:PICOSTAR-3
tradename:NexFET
pd - power dissipation:500 mW
number of channels:1 Channel
technology:Si
configuration:Single
channel mode:Enhancement
id - continuous drain current:2.3 A
qg - gate charge:1.14 nC
rds on - drain-source resistance:175 mOhms
transistor polarity:P-Channel
transistor type:1 P-Channel
vds - drain-source breakdown voltage:12 V
vgs - gate-source voltage:-8 V, +8 V
vgs th - gate-source threshold voltage:700 mV
typical turn-off delay time:18 ns
typical turn-on delay time:4.5 ns
forward transconductance - min:2 S
fall time:7 ns
rise time:3.9 ns
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