CSD17309Q3, MOSFET 30V N Channel NexFET Power MOSFET

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Артикул: CSD17309Q3
Semiconductors\Discrete Semiconductors\Transistors\MOSFETTexas Instruments NexFET™ Power MOSFET The Texas Instruments N-Channel NexFET™ Power MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI...
Основные
вес, г0.04
package / caseVSON-CLIP-8
typePower MOSFET
minimum operating temperature-55 C
360
+
Бонус: 7.2 !
Бонусная программа
Итого: 360
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Semiconductors\Discrete Semiconductors\Transistors\MOSFETTexas Instruments NexFET™ Power MOSFET The Texas Instruments N-Channel NexFET™ Power MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.
Основные
вес, г0.04
package / caseVSON-CLIP-8
typePower MOSFET
minimum operating temperature-55 C
factory pack quantity2500
manufacturerTexas Instruments
maximum operating temperature+150 C
mounting styleSMD/SMT
packagingCut Tape or Reel
product categoryMOSFET
product typeMOSFET
seriesCSD17309Q3
subcategoryMOSFETs
configurationSingle
fall time3.6 ns
rise time9.9 ns
factory pack quantity: factory pack quantity:2500
manufacturer:Texas Instruments
maximum operating temperature:+150 C
minimum operating temperature:-55 C
mounting style:SMD/SMT
product category:MOSFET
product type:MOSFET
series:CSD17309Q3
subcategory:MOSFETs
type:Power MOSFET
packaging:Reel, Cut Tape, MouseReel
number of channels1 Channel
Вес и габариты
package/case:VSON-CLIP-8
tradename:NexFET
tradenameNexFET
pd - power dissipation:2.8 W
technologySi
number of channels:1 Channel
development kitDLPDLCR4710EVM-G2, TPS65982-EVM, TPS65983EVM
development kit:DLPDLCR4710EVM-G2, TPS65982-EVM, TPS65983EVM
pd - power dissipation2.8 W
technology:Si
configuration:Single
channel modeEnhancement
rds on - drain-source resistance5.4 mOhms
transistor polarityN-Channel
vds - drain-source breakdown voltage30 V
vgs - gate-source voltage8 V
id - continuous drain current60 A
typical turn-on delay time6.1 ns
typical turn-off delay time13.2 ns
forward transconductance - min67 S
qg - gate charge7.5 nC
transistor type1 N-Channel
vgs th - gate-source threshold voltage1.2 V
channel mode:Enhancement
id - continuous drain current:60 A
qg - gate charge:7.5 nC
rds on - drain-source resistance:5.4 mOhms
transistor polarity:N-Channel
transistor type:1 N-Channel
vds - drain-source breakdown voltage:30 V
vgs - gate-source voltage:-8 V, +8 V
vgs th - gate-source threshold voltage:1.2 V
typical turn-off delay time:13.2 ns
typical turn-on delay time:6.1 ns
forward transconductance - min:67 S
fall time:3.6 ns
rise time:9.9 ns
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