BUL1102EFP

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Электронные компоненты Транзисторы Биполярные (BJTs) ST Microelectronics BUL1102EFP
STMicroelectronics
Дата загрузки18.02.2024
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вес, г02.07.2024
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ПроизводительSTMicroelectronics
БрендSTMicroelectronics
570
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ЭлектроэлементTRANSISTOR, NPN, TO-220FP; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:450V; Transition Frequency ft:-; Power Dissipation Pd:30W; DC Collector Current:4A; DC Current Gain hFE:20hFE; Transistor Case Style:TO-220FP; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on):1.5V; Continuous Collector Current Ic Max:4A; Current Ic Continuous a Max:4A; Current Ic hFE:2A; Full Power Rating Temperature:25°C; Hfe Min:12; No. of Transistors:1; Power Dissipation Ptot Max:30W; Termination Type:Through Hole; Voltage Vcbo:450V
Дата загрузки18.02.2024
Вес и габариты
вес, г02.07.2024
Информация о производителе
ПроизводительSTMicroelectronics
БрендSTMicroelectronics
Основные
base product numberBUL1102 ->
collector-emitter saturation voltage:1.5 V
collector- emitter voltage vceo max450 V
collector- emitter voltage vceo max:450 V
configurationSingle
configuration:Single
continuous collector current4 A
continuous collector current:4 A
current - collector cutoff (max)100ВµA
current - collector (ic) (max)4A
dc collector/base gain hfe min35 at 250 mA at 5 V, 12 at 2 A at 5 V
dc collector/base gain hfe min:35 at 250 mA, 5 V, 12 at 2 A, 5 V
dc current gain (hfe) (min) @ ic, vce12 @ 2A, 5V
eccnEAR99
emitter- base voltage vebo12 V
emitter- base voltage vebo:12 V
factory pack quantity1000
factory pack quantity: factory pack quantity:1000
height16.4 mm
htsus8541.29.0095
категорияЭлектронные компоненты/Транзисторы
length10.4 mm
manufacturerSTMicroelectronics
manufacturer:STMicroelectronics
maximum collector emitter voltage450 V
maximum dc collector current4 A
maximum dc collector current:4 A
maximum emitter base voltage12 V
maximum operating temperature+150 C
maximum operating temperature:+150 C
maximum power dissipation70 W
minimum operating temperature-65 C
moisture sensitivity level (msl)1 (Unlimited)
mounting styleThrough Hole
mounting style:Through Hole
mounting typeThrough Hole
number of elements per chip1
operating temperature150В°C (TJ)
other related documentshttp://www.st.com/web/catalog/sense_power/FM100/CL
packageTube
package / caseTO-220FP-3
package/case:TO-220FP-3
package typeTO-220FP
packagingTube
packaging:Tube
партномер8008444187
pd - power dissipation30 W
pd - power dissipation:30 W
pin count3
power - max30W
product categoryBipolar Transistors-BJT
product category:Bipolar Transistors-BJT
product type:BJTs-Bipolar Transistors
reach statusREACH Unaffected
rohsDetails
rohs statusROHS3 Compliant
seriesBUL1102E
series:BUL1102E
subcategory:Transistors
supplier device packageTO-220 Full Pack
technology:Si
transistor configurationSingle
transistor polarityNPN
transistor polarity:NPN
transistor typeNPN
vce saturation (max) @ ib, ic1.5V @ 400mA, 2A
voltage - collector emitter breakdown (max)450V
Время загрузки14:03:47
width4.6 mm
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