STGWA40HP65FB2, БТИЗ транзистор, 72 А, 1.55 В, 227 Вт, 650 В, TO-247, 3 вывод(-ов)
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HB/HB2 Series Insulated-Gate Bipolar TransistorsSTMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.
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