S29GL128P90TFIR10, Флеш память, Параллельная NOR, 128 Мбит, 16М x 8бит, Параллельный, TSOP, 56 вывод

Полупроводники - Микросхемы\Память\FLASHThe S29GL128P90TFIR10 is a 128Mbit 3V, page flash with 90nm MirrorBit process technology in 56 pin TSOP package. This device offers a fast page access time of 25ns with a corresponding random access time as fast as 90ns at regulated VCC. It features a write buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. It makes device ideal for today's embedded applications that require higher density, better performance and lower power consumption. It has an uniform 64Kword/128Kbyte sector architecture with one hundred twenty-eight sectors, hardware reset input (RESET#) resets device and ready/busy# output (RY/BY#) detects program or erase cycle completion.
• VIO = VCC = 3V to 3.6V, highest address sector protected• 8-word/16-byte page read buffer• 100000 erase cycles per sector typical and 20year data retention typical• Write operation status bits indicate progra