Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 650 В 7,8 A (Ta) 80 Вт (Tc) сквозное отверстие I-PAK

Подробное описание

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	150В°C (TJ)
package	Tube

560 ₽

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Бонус: 11.2 !

Бонусная программа

Итого: 560 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 650 В 7,8 A (Ta) 80 Вт (Tc) сквозное отверстие I-PAK

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	150В°C (TJ)
package	Tube
package / case	TO-251-3 Stub Leads, IPak
rohs status	RoHS Compliant
eccn	EAR99
htsus	8541.29.0095
supplier device package	I-PAK
series	DTMOSIV ->
base product number	RN1105 ->
Вес и габариты
technology	MOSFET (Metal Oxide)
current - continuous drain (id) @ 25в°c	7.8A (Ta)
drain to source voltage (vdss)	650V
drive voltage (max rds on, min rds on)	10V
fet type	N-Channel
gate charge (qg) (max) @ vgs	16nC @ 10V
input capacitance (ciss) (max) @ vds	570pF @ 300V
power dissipation (max)	80W (Tc)
rds on (max) @ id, vgs	670mOhm @ 3.9A, 10V
vgs (max)	В±30V
vgs(th) (max) @ id	3.5V @ 300ВµA

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