Name: SI2304DDS-T1-GE3, Силовой МОП-транзистор, N Канал, 30 В, 3.6 А, 0.049 Ом, TO-236, Surface Mount
SKU: SI2304DDS-T1-GE3

64 ₽

– +

Бонус: 1.28 !

Бонусная программа

Итого: 64 ₽

Купить

► Купить SI2304DDS-T1-GE3, Силовой МОП-транзистор, N Канал, 30 В, 3.6 А, 0.049 Ом, TO-236, Surface Mount в интернет-магазине ООО «Телеметрия».

■ Категория: Транзисторы полевые (FETs, MOSFETs)

★ Цена: 64 руб.

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☎ Заказать: +7 (929) 433-44-45

Основные
вес, г	0.05
pin count	3
packaging	Tape and Reel
product category	Power MOSFET
automotive	No
eu rohs	compliant
lead shape	Gull-wing
maximum operating temperature (°c)	150
mounting	surface mount
part status	active
pcb changed	3
standard package name	SOT-23
supplier package	SOT-23
eccn (us)	ear99
maximum power dissipation (mw)	1100
minimum operating temperature (°c)	-55
configuration	Single
hts	8541.29.00.95
package height	1.02(Max)
package length	3.04(Max)
package width	1.4(Max)
process technology	TrenchFET
Вес и габариты
number of elements per chip	1
channel type	N
channel mode	Enhancement
maximum continuous drain current (a)	3.3
maximum drain source resistance (mohm)	60@10V
maximum drain source voltage (v)	30
maximum gate source voltage (v)	±20
typical fall time (ns)	22
typical gate charge @ 10v (nc)	4.5
typical gate charge @ vgs (nc)	2.1@4.5V\|4.5@10V
typical input capacitance @ vds (pf)	235@15V
typical rise time (ns)	50
typical turn-off delay time (ns)	12
typical turn-on delay time (ns)	12
military	No
rds on - drain-source resistance	60mО© @ 3.2A,10V
transistor polarity	N Channel
vds - drain-source breakdown voltage	30V
vgs - gate-source voltage	2.2V @ 250uA
continuous drain current (id) @ 25в°c	3.3A
power dissipation-max (ta=25в°c)	1.1W

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Кнопки

SI2304DDS-T1-GE3, Силовой МОП-транзистор, N Канал, 30 В, 3.6 А, 0.049 Ом, TO-236, Surface Mount