- Обзор
- Характеристики
- Отзывы (0)
- Реквизиты
Semiconductor - Discrete > Transistors > FET - MOSFETThe SI7456DP-TI-GE3 is a 100VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC primary side switch, telecom/server and full/half-bridge DC-to-DC applications.
• New low thermal resistance PowerPAK® package with small size and low 1.07mm profile• PWM optimized• Fast switching• 100% Rg tested• Halogen-free• -55 to 150°C Operating temperature range
• New low thermal resistance PowerPAK® package with small size and low 1.07mm profile• PWM optimized• Fast switching• 100% Rg tested• Halogen-free• -55 to 150°C Operating temperature range
0.0
общая оценка
Всего 0 отзывов
Отзывов нет














