FDV305N, Trans MOSFET N-CH 20V 0.9A 3-Pin SOT-23 T/R
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Артикул: FDV305N
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Semiconductor - Discrete > Transistors > FET - MOSFETON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types.
| Информация о производителе | |
| Производитель | ON Semiconductor*** |
| Бренд | ON Semiconductor*** |
| Основные | |
| automotive | No |
| channel mode | Enhancement |
| channel type | N |
| configuration | Single |
| Дата загрузки | 24.09.2023 |
| eccn (us) | ear99 |
| eu rohs | compliant |
| factory pack quantity | 3000 |
| fall time | 7 ns |
| forward transconductance - min | 3 S |
| height | 1.2 mm |
| id - continuous drain current | 900 mA |
| категория | Кнопки, переключатели, разъемы, реле/Разъемы |
| кол-во в упаковке | 1 |
| lead shape | Gull-wing |
| length | 2.9 mm |
| manufacturer | ON Semiconductor |
| maximum continuous drain current | 900 mA |
| maximum continuous drain current (a) | 0.9 |
| maximum diode forward voltage (v) | 01.02.2023 |
| maximum drain source resistance | 220 mΩ |
| maximum drain source resistance (mohm) | 220@4.5V |
| maximum drain source voltage | 20 V |
| maximum drain source voltage (v) | 20 |
| maximum gate source leakage current (na) | 100 |
| maximum gate source voltage | -12 V, +12 V |
| maximum gate source voltage (v) | ±12 |
| maximum gate threshold voltage (v) | 01.05.2023 |
| maximum idss (ua) | 1 |
| maximum operating temperature | +150 C |
| maximum operating temperature (°c) | 150 |
| maximum positive gate source voltage (v) | 12 |
| maximum power dissipation | 350 mW |
| maximum power dissipation (mw) | 350 |
| maximum pulsed drain current @ tc=25°c (a) | 2 |
| minimum gate threshold voltage | 0.6V |
| minimum gate threshold voltage (v) | 0.6 |
| minimum operating temperature | -55 C |
| minimum operating temperature (°c) | -55 |
| mounting | surface mount |
| mounting style | SMD/SMT |
| mounting type | Surface Mount |
| number of channels | 1 Channel |
| number of elements per chip | 1 |
| operating junction temperature (°c) | -55 to 150 |
| package / case | SOT-23-3 |
| package type | SOT-23 |
| packaging | Reel |
| партномер | 8003320964 |
| part # aliases | FDV305N_NL |
| part status | active |
| pcb changed | 3 |
| pd - power dissipation | 350 mW |
| pin count | 3 |
| ppap | No |
| process technology | PowerTrench |
| product | MOSFET Small Signal |
| product category | MOSFET |
| rds on - drain-source resistance | 164 mOhms |
| rise time | 7 ns |
| rohs | Details |
| series | FDV305N |
| standard package name | SOT |
| supplier package | SOT-23 |
| technology | Si |
| tradename | PowerTrench |
| transistor configuration | Single |
| transistor material | Si |
| transistor polarity | N-Channel |
| transistor type | 1 N-Channel |
| type | MOSFET |
| typical diode forward voltage (v) | 0.75 |
| typical fall time (ns) | 01.04.2023 |
| typical gate charge @ 10v (nc) | 01.01.2023 |
| typical gate charge @ vgs | 1.1 nC @ 4.5 V |
| typical gate charge @ vgs (nc) | 1.1@4.5V |
| typical gate plateau voltage (v) | 01.09.2023 |
| typical gate threshold voltage (v) | 1 |
| typical gate to drain charge (nc) | 0.26 |
| typical gate to source charge (nc) | 0.26 |
| typical input capacitance @ vds (pf) | 109@10V |
| typical output capacitance (pf) | 30 |
| typical reverse recovery charge (nc) | 02.02.2023 |
| typical reverse recovery time (ns) | 07.04.2023 |
| typical reverse transfer capacitance @ vds (pf) | 14@10V |
| typical rise time (ns) | 7 |
| typical turn-off delay time | 8 ns |
| typical turn-off delay time (ns) | 8 |
| typical turn-on delay time | 4.5 ns |
| typical turn-on delay time (ns) | 04.05.2023 |
| unit weight | 0.001058 oz |
| vds - drain-source breakdown voltage | 20 V |
| vgs - gate-source voltage | 12 V |
| Время загрузки | 15:22:26 |
| width | 1.3 mm |
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Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26
