BSZ058N03LSGATMA1, MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
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Артикул: BSZ058N03LSGATMA1
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Semiconductors\Discrete Semiconductors\Transistors\MOSFETTrans MOSFET N-CH 30V 15A 8-Pin TSDSON EP T/R
| Информация о производителе | |
| Производитель | INFINEON TECHNOLOGIES AG. |
| Бренд | INFINEON TECHNOLOGIES AG. |
| Основные | |
| automotive | No |
| channel mode | Enhancement |
| channel mode: | Enhancement |
| channel type | N |
| configuration | Single Quad Drain Triple Source |
| configuration: | Single |
| Дата загрузки | 24.03.2024 |
| eccn (us) | EAR99 |
| eu rohs | Compliant with Exemption |
| factory pack quantity: factory pack quantity: | 5000 |
| fall time: | 3.2 ns |
| forward transconductance - min: | 36 S |
| id - continuous drain current: | 40 A |
| категория | Кнопки, переключатели, разъемы, реле/Разъемы |
| lead shape | No Lead |
| manufacturer: | Infineon |
| maximum continuous drain current (a) | 15 |
| maximum drain source resistance (mohm) | 5.8 10V |
| maximum drain source voltage (v) | 30 |
| maximum gate source voltage (v) | ±20 |
| maximum gate threshold voltage (v) | 02.02.2024 |
| maximum operating temperature: | +150 C |
| maximum operating temperature (°c) | 150 |
| maximum power dissipation (mw) | 2100 |
| minimum operating temperature: | -55 C |
| minimum operating temperature (°c) | -55 |
| mounting | Surface Mount |
| mounting style: | SMD/SMT |
| number of channels: | 1 Channel |
| number of elements per chip | 1 |
| package / case: | TSDSON-8 |
| packaging | Tape and Reel |
| партномер | 8005239243 |
| part # aliases: | BSZ058N03LS G SP000307424 |
| part status | Active |
| pcb changed | 8 |
| pd - power dissipation: | 45 W |
| pin count | 8 |
| ppap | No |
| process technology | OptiMOS |
| product category | Power MOSFET |
| product category: | MOSFET |
| product type: | MOSFET |
| qg - gate charge: | 22 nC |
| rds on - drain-source resistance: | 7.1 mOhms |
| rise time: | 3.6 ns |
| series: | OptiMOS 3 |
| standard package name | SON |
| subcategory: | MOSFETs |
| supplier package | TSDSON EP |
| technology: | Si |
| tradename: | OptiMOS |
| transistor polarity: | N-Channel |
| transistor type: | 1 N-Channel |
| typical fall time (ns) | 03.02.2024 |
| typical gate charge @ 10v (nc) | 22 |
| typical gate charge @ vgs (nc) | 11 4.5V|22 10V |
| typical input capacitance @ vds (pf) | 1800 15V |
| typical rise time (ns) | 03.06.2024 |
| typical turn-off delay time: | 19 ns |
| typical turn-off delay time (ns) | 19 |
| typical turn-on delay time: | 4.6 ns |
| typical turn-on delay time (ns) | 04.06.2024 |
| vds - drain-source breakdown voltage: | 30 V |
| вес, г | 0.04 |
| vgs - gate-source voltage: | -20 V, +20 V |
| vgs th - gate-source threshold voltage: | 2.2 V |
| Время загрузки | 16:46:09 |
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Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26
