ZXM61N03FTA, Транзистор N-MOSFET, полевой, 30В, 1,1А, 625мВт, SOT23
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Артикул: ZXM61N03FTA
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Полупроводники\Транзисторы\Транзисторы униполярные\Транзисторы с каналом типа N\Транзисторы с каналом N SMD
| Основные | |
| вес, г | 0.01 |
| package / case | SOT-23-3 |
| type | MOSFET |
| minimum operating temperature | -55 C |
| pin count | 3 |
| factory pack quantity | 3000 |
| manufacturer | Diodes Incorporated |
| maximum operating temperature | +150 C |
| mounting style | SMD/SMT |
| packaging | Tape and Reel |
| product category | Small Signal |
| product type | MOSFET |
| series | ZXM61N03 |
| subcategory | MOSFETs |
| automotive | No |
| eu rohs | Compliant |
| lead shape | Gull-wing |
| maximum operating temperature (°c) | 150 |
| mounting | Surface Mount |
| part status | Active |
| pcb changed | 3 |
| standard package name | SOT-23 |
| supplier package | SOT-23 |
| eccn (us) | EAR99 |
| maximum power dissipation (mw) | 806 |
| minimum operating temperature (°c) | -55 |
| configuration | Single |
| fall time | 3 ns |
| rise time | 2.5 ns |
| number of channels | 1 Channel |
| hts | 8541.29.00.95 |
| package height | 1.02(Max) |
| package length | 3.04(Max) |
| package width | 1.4(Max) |
| Вес и габариты | |
| product | MOSFET Small Signal |
| number of elements per chip | 1 |
| channel type | N |
| technology | Si |
| pd - power dissipation | 625 mW |
| channel mode | Enhancement |
| maximum drain source resistance (mohm) | 300@4.5V |
| maximum drain source voltage (v) | 30 |
| maximum gate source voltage (v) | ±20 |
| maximum gate threshold voltage (v) | 1(Min) |
| typical fall time (ns) | 3 |
| typical gate charge @ 10v (nc) | 4.1(Max) |
| typical gate charge @ vgs (nc) | 4.1(Max)@10V |
| typical input capacitance @ vds (pf) | 150@25V |
| typical rise time (ns) | 2.5 |
| typical turn-off delay time (ns) | 5.8 |
| typical turn-on delay time (ns) | 1.9 |
| military | No |
| rds on - drain-source resistance | 220 mOhms |
| transistor polarity | N-Channel |
| vds - drain-source breakdown voltage | 30 V |
| vgs - gate-source voltage | 10 V |
| id - continuous drain current | 1.4 A |
| typical turn-on delay time | 1.9 ns |
| typical turn-off delay time | 5.8 ns |
| forward transconductance - min | 0.87 S |
| transistor type | 1 N-Channel |
| vgs th - gate-source threshold voltage | 1 V |
| typical output capacitance (pf) | 35 |
| typical gate to drain charge (nc) | 0.63(Max) |
| typical gate to source charge (nc) | 0.4(Max) |
| typical reverse recovery charge (nc) | 3.5 |
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Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26
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