PMV160UP.215, Транзистор: P-MOSFET, полевой, -20В, -0,8А, 480мВт, SOT23
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Артикул: PMV160UP,215
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Полупроводники\Транзисторы\Транзисторы униполярные\Транзисторы с каналом типа P\Транзисторы с каналом P SMDP-канал 20 В, 1,2 А (Ta) 335 мВт (Ta), 2,17 Вт (Tc), поверхностный монтаж TO-236AB
| Основные | |
| вес, г | 0.1 |
| moisture sensitivity level (msl) | 1 (Unlimited) |
| mounting type | Surface Mount |
| operating temperature | -55В°C ~ 150В°C (TJ) |
| package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| package / case | TO-236-3, SC-59, SOT-23-3 |
| rohs status | ROHS3 Compliant |
| eccn | EAR99 |
| htsus | 8541.29.0095 |
| reach status | REACH Unaffected |
| supplier device package | TO-236AB |
| minimum operating temperature | -55 C |
| factory pack quantity | 3000 |
| manufacturer | NEXPERIA |
| maximum operating temperature | +150 C |
| mounting style | SMD/SMT |
| packaging | Cut Tape or Reel |
| product category | MOSFET |
| product type | MOSFET |
| subcategory | MOSFETs |
| base product number | PMV160 -> |
| configuration | Single |
| fall time | 17 ns |
| rise time | 26 ns |
| factory pack quantity: factory pack quantity: | 3000 |
| manufacturer: | Nexperia |
| maximum operating temperature: | +150 C |
| minimum operating temperature: | -55 C |
| mounting style: | SMD/SMT |
| product category: | MOSFET |
| product type: | MOSFET |
| product: | MOSFET Small Signal |
| subcategory: | MOSFETs |
| packaging: | Reel, Cut Tape, MouseReel |
| part # aliases: | 934064761215 |
| number of channels | 1 Channel |
| Вес и габариты | |
| package/case: | SOT-23-3 |
| product | MOSFET Small Signal |
| pd - power dissipation: | 480 mW |
| technology | MOSFET (Metal Oxide) |
| number of channels: | 1 Channel |
| pd - power dissipation | 480 mW |
| technology: | Si |
| configuration: | Single |
| channel mode | Enhancement |
| current - continuous drain (id) @ 25в°c | 1.2A (Ta) |
| drain to source voltage (vdss) | 20V |
| drive voltage (max rds on, min rds on) | 1.8V, 4.5V |
| fet type | P-Channel |
| gate charge (qg) (max) @ vgs | 4nC @ 4.5V |
| input capacitance (ciss) (max) @ vds | 365pF @ 10V |
| power dissipation (max) | 335mW (Ta), 2.17W (Tc) |
| rds on (max) @ id, vgs | 210mOhm @ 1.2A, 4.5V |
| vgs (max) | В±8V |
| vgs(th) (max) @ id | 950mV @ 250ВµA |
| rds on - drain-source resistance | 210 mOhms |
| transistor polarity | P-Channel |
| vds - drain-source breakdown voltage | 20 V |
| vgs - gate-source voltage | 4.5 V |
| id - continuous drain current | 1.2 A |
| typical turn-on delay time | 7 ns |
| typical turn-off delay time | 35 ns |
| qg - gate charge | 3.3 nC |
| transistor type | 1 P-Channel |
| vgs th - gate-source threshold voltage | 450 mV |
| channel mode: | Enhancement |
| id - continuous drain current: | 1.2 A |
| qg - gate charge: | 3.3 nC |
| rds on - drain-source resistance: | 210 mOhms |
| transistor polarity: | P-Channel |
| transistor type: | 1 P-Channel |
| vds - drain-source breakdown voltage: | 20 V |
| vgs - gate-source voltage: | -8 V, +8 V |
| vgs th - gate-source threshold voltage: | 450 mV |
| typical turn-off delay time: | 35 ns |
| typical turn-on delay time: | 7 ns |
| fall time: | 17 ns |
| rise time: | 26 ns |
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