NX3008NBKS.115, Транзистор N-МОП, полевой, 30В, 350мА, 280мВт, SOT363
Оставить отзыв
В избранноеВ сравнение
Артикул: NX3008NBKS,115
- Обзор
- Характеристики
- Отзывы (0)
- Реквизиты
Mosfet Array 2 N-Channel (Dual) 30V 350mA 445mW Поверхностный монтаж 6-TSSOP
| Основные | |
| вес, г | 0.01 |
| moisture sensitivity level (msl) | 1 (Unlimited) |
| mounting type | Surface Mount |
| operating temperature | -55В°C ~ 150В°C (TJ) |
| package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| package / case | 6-TSSOP, SC-88, SOT-363 |
| rohs status | ROHS3 Compliant |
| eccn | EAR99 |
| htsus | 8541.21.0095 |
| reach status | REACH Unaffected |
| supplier device package | 6-TSSOP |
| package type | SOT-363 |
| minimum operating temperature | -55 C |
| width | 1.35mm |
| pin count | 6 |
| factory pack quantity | 3000 |
| manufacturer | NEXPERIA |
| maximum operating temperature | +150 C |
| mounting style | SMD/SMT |
| packaging | Cut Tape or Reel |
| product category | MOSFET |
| product type | MOSFET |
| series | Automotive, AEC-Q101, TrenchMOSв„ў -> |
| subcategory | MOSFETs |
| base product number | NX3008 -> |
| configuration | Dual |
| fall time | 19 ns |
| rise time | 11 ns |
| number of channels | 2 Channel |
| Вес и габариты | |
| number of elements per chip | 2 |
| channel type | N |
| technology | Si |
| pd - power dissipation | 445 mW |
| qualification | AEC-Q101 |
| transistor configuration | Isolated |
| maximum drain source voltage | 30 V |
| maximum gate source voltage | -8 V, +8 V |
| maximum continuous drain current | 350 mA |
| transistor material | Si |
| maximum gate threshold voltage | 1.1V |
| maximum drain source resistance | 2.8 Ω |
| channel mode | Enhancement |
| current - continuous drain (id) @ 25в°c | 350mA |
| drain to source voltage (vdss) | 30V |
| fet type | 2 N-Channel (Dual) |
| gate charge (qg) (max) @ vgs | 0.68nC @ 4.5V |
| input capacitance (ciss) (max) @ vds | 50pF @ 15V |
| rds on (max) @ id, vgs | 1.4Ohm @ 350mA, 4.5V |
| vgs(th) (max) @ id | 1.1V @ 250ВµA |
| minimum gate threshold voltage | 0.6V |
| rds on - drain-source resistance | 1.4 Ohms |
| transistor polarity | N-Channel |
| vds - drain-source breakdown voltage | 30 V |
| vgs - gate-source voltage | 4.5 V |
| id - continuous drain current | 350 mA |
| maximum power dissipation | 445 mW |
| typical gate charge @ vgs | 0.52 nC 4.5 V |
| typical turn-on delay time | 15 ns |
| typical turn-off delay time | 69 ns |
| qg - gate charge | 0.52 nC |
| transistor type | 2 N-Channel Trench MOSFET |
| vgs th - gate-source threshold voltage | 600 mV |
| power - max | 445mW |
| fet feature | Logic Level Gate |
Отзывов нет
Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26
![NCE3050, Транзистор MOSFET N-канал 30V 50A [TO-220]](/wa-data/public/shop/products/34/17/211734/images/243267/243267.300x0.jpg "NCE3050, Транзистор MOSFET N-канал 30V 50A [TO-220]")
![BC557BTA, Транзистор PNP 45В 0.1А 0.5Вт, [TO-92]](/wa-data/public/shop/products/65/77/287765/images/328177/328177.300x0.jpg "BC557BTA, Транзистор PNP 45В 0.1А 0.5Вт, [TO-92]")
![KBP210 (RS207), Диодный мост 2А 1000В [KBP]](/wa-data/public/shop/products/33/37/123733/images/155187/155187.300x0.jpg "KBP210 (RS207), Диодный мост 2А 1000В [KBP]")
