IXTP60N10T, Транзистор: N-MOSFET, полевой, 100В, 60А, 176Вт, TO220-3, 59нс

Gen1 Trench Gate Power MOSFETsIXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low R DS(ON), enabling very low power dissipation. This, combined with wide-ranging operating junction temperature, from -40°C to 175°C, make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.