BSS192PH6327FTSA1, Транзистор: P-MOSFET, полевой, -250В, -0,19А, 1Вт, PG-SOT89
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Артикул: BSS192PH6327FTSA1
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P-канал 250 В 190 мА (Ta) 1 Вт (Ta) поверхностный монтаж PG-SOT89
| Основные | |
| вес, г | 0.21 |
| moisture sensitivity level (msl) | 1 (Unlimited) |
| mounting type | Surface Mount |
| operating temperature | -55В°C ~ 150В°C (TJ) |
| package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| package / case | TO-243AA |
| rohs status | ROHS3 Compliant |
| eccn | EAR99 |
| htsus | 8541.29.0095 |
| reach status | REACH Unaffected |
| supplier device package | PG-SOT89 |
| pin count | 4 |
| packaging | Tape and Reel |
| product category | Small Signal |
| series | SIPMOSВ® -> |
| automotive | Yes |
| eu rohs | Compliant |
| lead shape | Flat |
| maximum operating temperature (°c) | 150 |
| mounting | Surface Mount |
| part status | Active |
| pcb changed | 3 |
| ppap | Unknown |
| standard package name | SOT |
| supplier package | SOT-89 |
| base product number | BSS192 -> |
| eccn (us) | EAR99 |
| maximum power dissipation (mw) | 1000 |
| minimum operating temperature (°c) | -55 |
| supplier temperature grade | Automotive |
| configuration | Single Dual Drain |
| process technology | SIPMOS |
| Вес и габариты | |
| number of elements per chip | 1 |
| channel type | P |
| technology | MOSFET (Metal Oxide) |
| tab | Tab |
| channel mode | Enhancement |
| maximum continuous drain current (a) | 0.19 |
| maximum drain source resistance (mohm) | 12000 10V |
| maximum drain source voltage (v) | 250 |
| maximum gate source leakage current (na) | 100 |
| maximum gate source voltage (v) | ±20 |
| maximum gate threshold voltage (v) | 2 |
| maximum idss (ua) | 0.2 |
| typical fall time (ns) | 50 |
| typical gate charge @ 10v (nc) | 4.9 |
| typical gate charge @ vgs (nc) | 4.9 10V |
| typical input capacitance @ vds (pf) | 83 25V |
| typical rise time (ns) | 5.2 |
| typical turn-off delay time (ns) | 72 |
| typical turn-on delay time (ns) | 4.7 |
| current - continuous drain (id) @ 25в°c | 190mA (Ta) |
| drain to source voltage (vdss) | 250V |
| drive voltage (max rds on, min rds on) | 2.8V, 10V |
| fet type | P-Channel |
| gate charge (qg) (max) @ vgs | 6.1nC @ 10V |
| input capacitance (ciss) (max) @ vds | 104pF @ 25V |
| power dissipation (max) | 1W (Ta) |
| rds on (max) @ id, vgs | 12Ohm @ 190mA, 10V |
| vgs (max) | В±20V |
| vgs(th) (max) @ id | 2V @ 130ВµA |
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Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26
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