BSS127S-7, Trans MOSFET N-CH 600V 0.07A 3-Pin SOT-23 T/R
Оставить отзыв
В избранноеВ сравнение
Артикул: BSS127S-7
- Характеристики
- Отзывы (0)
- Реквизиты
| Основные | |
| package / case | SOT-23-3 |
| minimum operating temperature | -55 C |
| pin count | 3 |
| factory pack quantity | 3000 |
| manufacturer | Diodes Incorporated |
| maximum operating temperature | +150 C |
| mounting style | SMD/SMT |
| packaging | Tape and Reel |
| product category | Power MOSFET |
| product type | MOSFET |
| series | BSS127 |
| subcategory | MOSFETs |
| automotive | No |
| eu rohs | Compliant |
| lead shape | Gull-wing |
| maximum operating temperature (°c) | 150 |
| mounting | Surface Mount |
| part status | Active |
| pcb changed | 3 |
| standard package name | SOT |
| supplier package | SOT-23 |
| eccn (us) | EAR99 |
| maximum power dissipation (mw) | 1250 |
| minimum operating temperature (°c) | -55 |
| configuration | Single |
| fall time | 168 ns |
| rise time | 7.2 ns |
| number of channels | 1 Channel |
| hts | 8541.29.00.95 |
| package height | 0.98 |
| package length | 2.9 |
| package width | 1.3 |
| Вес и габариты | |
| number of elements per chip | 1 |
| channel type | N |
| technology | Si |
| pd - power dissipation | 1.25 W |
| channel mode | Enhancement |
| maximum continuous drain current (a) | 0.07 |
| maximum drain source resistance (mohm) | 160000@10V |
| maximum drain source voltage (v) | 600 |
| maximum gate source leakage current (na) | 100 |
| maximum gate source voltage (v) | ±20 |
| maximum gate threshold voltage (v) | 4.5 |
| maximum idss (ua) | 0.1 |
| typical fall time (ns) | 168 |
| typical gate charge @ 10v (nc) | 1.08 |
| typical gate charge @ vgs (nc) | 1.08@10V |
| typical input capacitance @ vds (pf) | 21.8@25V |
| typical rise time (ns) | 7.2 |
| typical turn-off delay time (ns) | 28.7 |
| typical turn-on delay time (ns) | 5 |
| military | No |
| rds on - drain-source resistance | 160 Ohms |
| transistor polarity | N-Channel |
| vds - drain-source breakdown voltage | 600 V |
| vgs - gate-source voltage | 10 V |
| id - continuous drain current | 70 mA |
| typical turn-on delay time | 5 ns |
| typical turn-off delay time | 28.7 ns |
| transistor type | 1 N-Channel |
| vgs th - gate-source threshold voltage | 3 V |
| operating junction temperature (°c) | -55 to 150 |
| maximum diode forward voltage (v) | 1.5 |
| maximum positive gate source voltage (v) | 20 |
| кол-во в упаковке | 3000 |
Отзывов нет
Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26
![NCE3050, Транзистор MOSFET N-канал 30V 50A [TO-220]](/wa-data/public/shop/products/34/17/211734/images/243267/243267.300x0.jpg "NCE3050, Транзистор MOSFET N-канал 30V 50A [TO-220]")
![KBP210 (RS207), Диодный мост 2А 1000В [KBP]](/wa-data/public/shop/products/33/37/123733/images/155187/155187.300x0.jpg "KBP210 (RS207), Диодный мост 2А 1000В [KBP]")
