AO3404A

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AO3404A
Основные
automotiveUnknown
channel modeEnhancement
channel typeN
150
+
Бонус: 3 !
Бонусная программа
Итого: 150
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N-канал 30 В, 5,8 А (Ta) 1,4 Вт (Ta), поверхностный монтаж SOT-23-3L
Основные
automotiveUnknown
channel modeEnhancement
channel typeN
configurationSingle
continuous drain current (id) @ 25°c5.8A
current - continuous drain (id) @ 25в°c5.8A (Ta)
drain to source voltage (vdss)30V
drive voltage (max rds on, min rds on)4.5V, 10V
eccnEAR99
eccn (us)EAR99
eu rohsCompliant
fet typeN-Channel
gate charge (qg) (max) @ vgs17nC @ 10V
hts8541.29.00.95
htsus8541.29.0095
input capacitance (ciss) (max) @ vds820pF @ 15V
lead shapeGull-wing
manufacturerYoutai Semiconductor Co., Ltd.
maximum continuous drain current (a)5.8
maximum drain source resistance (mohm)25@10V
maximum drain source voltage (v)30
maximum gate source voltage (v)±20
maximum operating temperature (°c)150
maximum power dissipation (mw)1400
militaryNo
minimum operating temperature (°c)-55
moisture sensitivity level (msl)1 (Unlimited)
mountingSurface Mount
mounting typeSurface Mount
number of elements per chip1
operating temperature-55В°C ~ 150В°C (TJ)
other related documentshttp://aosmd.com/media/AOSGreenPolicy.pdf
packageTape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / caseTO-236-3, SC-59, SOT-23-3
package height1
package length2.9
package width1.6
packagingTape and Reel
part statusActive
pcb changed3
pin count3
power dissipation (max)1.4W (Ta)
power dissipation-max (ta=25°c)1.4W
product categoryPower MOSFET
rds on - drain-source resistance28mΩ 5.8A, 10V
rds on (max) @ id, vgs28mOhm @ 5.8A, 10V
reach statusREACH Unaffected
rohs statusROHS3 Compliant
standard package nameSOT-23
supplier device packageSOT-23-3L
supplier packageSOT-23
technologyMOSFET (Metal Oxide)
transistor polarityN Channel
typical fall time (ns)2.5
typical gate charge @ 10v (nc)7.1
typical gate charge @ vgs (nc)7.1@10V|3.3@4.5V
typical input capacitance @ vds (pf)373@15V
typical rise time (ns)2.4
typical turn-off delay time (ns)14.8
typical turn-on delay time (ns)4.5
vds - drain-source breakdown voltage30V
vgs - gate-source voltage3V 250uA
vgs (max)В±20V
vgs(th) (max) @ id3V @ 250ВµA
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