ZXMP6A18KTC, Транзистор P-MOSFET, полевой, -60В, -10,4А, 4,3Вт, DPAK

Оставить отзыв
В избранноеВ сравнение
Артикул: ZXMP6A18KTC
Вес и габариты
aec qualified numberAEC-Q101
automotiveYes
channel modeEnhancement
170
+
Бонус: 3.4 !
Бонусная программа
Итого: 170
Купить
  • Характеристики
  • Отзывы (0)
  • Реквизиты
Вес и габариты
aec qualified numberAEC-Q101
automotiveYes
channel modeEnhancement
channel typeP
configurationSingle
eccn (us)EAR99
eu rohsCompliant with Exemption
hts8541.29.00.95
lead shapeGull-wing
maximum continuous drain current (a)10.4
maximum drain source resistance (mohm)55@10V
maximum drain source voltage (v)60
maximum gate source leakage current (na)100
maximum gate source voltage (v)±20
maximum gate threshold voltage (v)1(Min)
maximum idss (ua)1
maximum operating temperature (°c)150
maximum power dissipation (mw)10100
militaryNo
minimum operating temperature (°c)-55
mountingSurface Mount
number of elements per chip1
package height2.39(Max)
package length6.73(Max)
package width6.22(Max)
packagingTape and Reel
part statusActive
pcb changed2
pin count3
process technologyTMOS
product categoryPower MOSFET
standard package nameTO-252
supplier packageDPAK
supplier temperature gradeAutomotive
tabTab
typical fall time (ns)23
typical gate charge @ 10v (nc)44
typical gate charge @ vgs (nc)44@10V|23@5V
typical input capacitance @ vds (pf)1580@30V
typical rise time (ns)5.8
typical turn-off delay time (ns)55
typical turn-on delay time (ns)4.6
вес, г1.5
Отзывов нет
Меню
0Корзина
Товар добавлен в корзину!
Товар добавлен в список сравнения
Товар добавлен в список избранных
Профиль