ZXMN2B14FHTA, Trans MOSFET N-CH 20V 4.3A 3-Pin SOT-23 T/R

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Артикул: ZXMN2B14FHTA
Вес и габариты
channel modeEnhancement
channel typeN
configurationSingle
66
+
Бонус: 1.32 !
Бонусная программа
Итого: 66
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Вес и габариты
channel modeEnhancement
channel typeN
configurationSingle
continuous drain current (id) @ 25в°c3.5A
eccn (us)EAR99
eu rohsCompliant
hts8541.29.00.95
lead shapeGull-wing
maximum continuous drain current (a)4.3
maximum drain source resistance (mohm)55@4.5V
maximum drain source voltage (v)20
maximum gate source leakage current (na)100
maximum gate source voltage (v)±8
maximum gate threshold voltage (v)1
maximum idss (ua)1
maximum operating temperature (°c)150
maximum power dissipation (mw)1500
militaryNo
minimum operating temperature (°c)-55
mountingSurface Mount
number of elements per chip1
package height1.02(Max)
package length3.04(Max)
package width1.4(Max)
packagingTape and Reel
part statusActive
pcb changed3
pin count3
power dissipation-max (ta=25в°c)1W
process technologyTMOS
product categoryPower MOSFET
rds on - drain-source resistance55mО© @ 3.5A,4.5V
standard package nameSOT-23
supplier packageSOT-23
transistor polarityN Channel
typical fall time (ns)5.5
typical gate charge @ vgs (nc)11@4.5V
typical input capacitance @ vds (pf)872@10V
typical rise time (ns)5.2
typical turn-off delay time (ns)30
typical turn-on delay time (ns)3.7
vds - drain-source breakdown voltage20V
vgs - gate-source voltage1V @ 250uA
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