Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 20V 2,1A (Ta) 625 мВт (Ta) поверхностный монтаж SOT-23-3

Подробное описание

Вес и габариты
continuous drain current (id) @ 25в°c	2.1A
current - continuous drain (id) @ 25в°c	2.1A (Ta)
drain to source voltage (vdss)	20V

120 ₽

– +

Бонус: 2.4 !

Бонусная программа

Итого: 120 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 20V 2,1A (Ta) 625 мВт (Ta) поверхностный монтаж SOT-23-3

Вес и габариты
continuous drain current (id) @ 25в°c	2.1A
current - continuous drain (id) @ 25в°c	2.1A (Ta)
drain to source voltage (vdss)	20V
drive voltage (max rds on, min rds on)	1.8V, 4.5V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	4.8nC @ 4.5V
htsus	8541.21.0095
input capacitance (ciss) (max) @ vds	370pF @ 10V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	TO-236-3, SC-59, SOT-23-3
power dissipation (max)	625mW (Ta)
power dissipation-max (ta=25в°c)	625mW
rds on - drain-source resistance	100mО© @ 2.4A,4.5V
rds on (max) @ id, vgs	100mOhm @ 2.4A, 4.5V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
supplier device package	SOT-23-3
technology	MOSFET (Metal Oxide)
transistor polarity	N Channel
vds - drain-source breakdown voltage	20V
vgs - gate-source voltage	1V @ 250uA
vgs (max)	В±8V
vgs(th) (max) @ id	1V @ 250ВµA

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