Name: ZXMN10A07FTA, N-Channel MOSFET, 800 mA, 100 V, 3-Pin SOT-23 Diodes Inc ZXMN10A07FTA
SKU: ZXMN10A07FTA

N-канал 100 В 700 мА (Ta) 625 мВт (Ta) поверхностный монтаж SOT-23-3

Подробное описание

Вес и габариты
continuous drain current (id) @ 25в°c	700mA
current - continuous drain (id) @ 25в°c	700mA (Ta)
drain to source voltage (vdss)	100V

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N-канал 100 В 700 мА (Ta) 625 мВт (Ta) поверхностный монтаж SOT-23-3

Вес и габариты
continuous drain current (id) @ 25в°c	700mA
current - continuous drain (id) @ 25в°c	700mA (Ta)
drain to source voltage (vdss)	100V
drive voltage (max rds on, min rds on)	6V, 10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	2.9nC @ 10V
htsus	8541.21.0095
input capacitance (ciss) (max) @ vds	138pF @ 50V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	TO-236-3, SC-59, SOT-23-3
power dissipation (max)	625mW (Ta)
power dissipation-max (ta=25в°c)	625mW
rds on - drain-source resistance	700mО© @ 1.5A,10V
rds on (max) @ id, vgs	700mOhm @ 1.5A, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
supplier device package	SOT-23-3
technology	MOSFET (Metal Oxide)
transistor polarity	N Channel
vds - drain-source breakdown voltage	100V
vgs - gate-source voltage	4V @ 250uA
vgs (max)	В±20V
vgs(th) (max) @ id	4V @ 250ВµA

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