Name: ZXMC3A16DN8TA, Dual N/P-Channel MOSFET, 5.4 A, 6.4 A, 30 V, 8-Pin SOIC Diodes Inc ZXMC3A16DN8TA
SKU: ZXMC3A16DN8TA

Массив Mosfet N и P-канал 30 В, 4,9 А, 4,1 А, 1,25 Вт для поверхностного монтажа 8-SO

Подробное описание

Вес и габариты
channel mode	Enhancement
configuration	Dual
current - continuous drain (id) @ 25в°c	4.9A, 4.1A

260 ₽

– +

Бонус: 5.2 !

Бонусная программа

Итого: 260 ₽

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Массив Mosfet N и P-канал 30 В, 4,9 А, 4,1 А, 1,25 Вт для поверхностного монтажа 8-SO

Вес и габариты
channel mode	Enhancement
configuration	Dual
current - continuous drain (id) @ 25в°c	4.9A, 4.1A
drain to source voltage (vdss)	30V
eccn	EAR99
factory pack quantity	500
fall time	9.4 ns
fet feature	Logic Level Gate
fet type	N and P-Channel
gate charge (qg) (max) @ vgs	17.5nC @ 10V
htsus	8541.29.0095
id - continuous drain current	6.4 A
input capacitance (ciss) (max) @ vds	796pF @ 25V
manufacturer	Diodes Incorporated
maximum operating temperature	+150 C
minimum operating temperature	-55 C
moisture sensitivity level (msl)	1 (Unlimited)
mounting style	SMD/SMT
mounting type	Surface Mount
number of channels	2 Channel
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)
package / case	8-SOIC (0.154"", 3.90mm Width)
packaging	Cut Tape or Reel
pd - power dissipation	2.1 W
power - max	1.25W
product category	MOSFET
product type	MOSFET
rds on - drain-source resistance	35 mOhms
rds on (max) @ id, vgs	35mOhm @ 9A, 10V
reach status	REACH Unaffected
rise time	6.4 ns
rohs status	ROHS3 Compliant
series	ZXMC3
subcategory	MOSFETs
supplier device package	8-SO
technology	Si
transistor polarity	N-Channel, P-Channel
transistor type	1 N-Channel, 1 P-Channel
type	MOSFET
typical turn-off delay time	21.6 ns
typical turn-on delay time	3 ns
vds - drain-source breakdown voltage	30 V
vgs - gate-source voltage	20 V
vgs(th) (max) @ id	1V @ 250ВµA (Min)

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