Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleP-канал 20 В, 3,5 А (Ta) 1,1 Вт (Ta), поверхностный монтаж 8-MSOP

Подробное описание

Вес и габариты
current - continuous drain (id) @ 25в°c	3.5A (Ta)
drain to source voltage (vdss)	20V
drive voltage (max rds on, min rds on)	2.7V, 4.5V

350 ₽

– +

Бонус: 7 !

Бонусная программа

Итого: 350 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleP-канал 20 В, 3,5 А (Ta) 1,1 Вт (Ta), поверхностный монтаж 8-MSOP

Вес и габариты
current - continuous drain (id) @ 25в°c	3.5A (Ta)
drain to source voltage (vdss)	20V
drive voltage (max rds on, min rds on)	2.7V, 4.5V
eccn	EAR99
fet type	P-Channel
gate charge (qg) (max) @ vgs	6.9nC @ 4.5V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	900pF @ 15V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	8-TSSOP, 8-MSOP (0.118"", 3.00mm Width)
power dissipation (max)	1.1W (Ta)
rds on (max) @ id, vgs	90mOhm @ 2.4A, 4.5V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
supplier device package	8-MSOP
technology	MOSFET (Metal Oxide)
vgs (max)	В±12V
vgs(th) (max) @ id	700mV @ 250ВµA

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