ZXM61P03FTA

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Semiconductors\Discrete Semiconductors\Transistors\MOSFETTrans MOSFET P-CH 30V 1.1A 3-Pin SOT-23 T/R
Вес и габариты
automotiveNo
channel modeEnhancement
channel typeP
36
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Semiconductors\Discrete Semiconductors\Transistors\MOSFETTrans MOSFET P-CH 30V 1.1A 3-Pin SOT-23 T/R
Вес и габариты
automotiveNo
channel modeEnhancement
channel typeP
configurationSingle
eccn (us)EAR99
eu rohsCompliant
factory pack quantity3000
fall time5 ns
forward transconductance - min0.44 S
id - continuous drain current1.1 A
lead shapeGull-wing
manufacturerDiodes Incorporated
maximum continuous drain current (a)1.1
maximum drain source resistance (mohm)350 10V
maximum drain source voltage (v)30
maximum gate source voltage (v)±20
maximum gate threshold voltage (v)1(Min)
maximum operating temperature+150 C
maximum operating temperature (°c)150
maximum power dissipation (mw)806
minimum operating temperature-55 C
minimum operating temperature (°c)-55
mountingSurface Mount
mounting styleSMD/SMT
number of channels1 Channel
number of elements per chip1
package / caseSOT-23-3
packagingCut Tape or Reel
part statusActive
pcb changed3
pd - power dissipation806 mW
pin count3
ppapNo
productMOSFET Small Signal
product categoryMOSFET
product typeMOSFET
qg - gate charge4.8 nC
rds on - drain-source resistance350 mOhms
rise time2.9 ns
seriesZXM61P03
standard package nameSOT-23
subcategoryMOSFETs
supplier packageSOT-23
technologySi
transistor polarityP-Channel
transistor type1 P-Channel
typeMOSFET
typical fall time (ns)5
typical gate charge @ 10v (nc)4.8(Max)
typical gate charge @ vgs (nc)4.8(Max)10V
typical gate to drain charge (nc)1.3(Max)
typical gate to source charge (nc)0.62(Max)
typical input capacitance @ vds (pf)140 25V
typical output capacitance (pf)45
typical reverse recovery charge (nc)7.7
typical rise time (ns)2.9
typical turn-off delay time8.9 ns
typical turn-off delay time (ns)8.9
typical turn-on delay time1.9 ns
typical turn-on delay time (ns)1.9
vds - drain-source breakdown voltage30 V
вес, г0.01
vgs - gate-source voltage10 V
vgs th - gate-source threshold voltage1 V
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