Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleP-канал 30 В 650 мА (Tj) 740 мВт (Ta) сквозное отверстие TO-92-3

Подробное описание

Вес и габариты
base product number	VP3203 ->
current - continuous drain (id) @ 25в°c	650mA (Tj)
drain to source voltage (vdss)	30V

610 ₽

– +

Бонус: 12.2 !

Бонусная программа

Итого: 610 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleP-канал 30 В 650 мА (Tj) 740 мВт (Ta) сквозное отверстие TO-92-3

Вес и габариты
base product number	VP3203 ->
current - continuous drain (id) @ 25в°c	650mA (Tj)
drain to source voltage (vdss)	30V
drive voltage (max rds on, min rds on)	4.5V, 10V
eccn	EAR99
fet type	P-Channel
htsus	8541.21.0095
input capacitance (ciss) (max) @ vds	300pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Bulk
package / case	TO-226-3, TO-92-3 (TO-226AA)
pcn packaging	http://www.microchip.com/mymicrochip/NotificationD
power dissipation (max)	740mW (Ta)
rds on (max) @ id, vgs	600mOhm @ 3A, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
supplier device package	TO-92-3
technology	MOSFET (Metal Oxide)
vgs (max)	В±20V
vgs(th) (max) @ id	3.5V @ 10mA

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Кнопки

VP3203N3-G