UT6K3TCR, Двойной МОП-транзистор, N Канал, 30 В, 5.5 А, 0.03 Ом, DFN2020, Surface Mount

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Артикул: UT6K3TCR
Low-Gate Drive Voltage MOSFETsROHM Low-Gate Drive Voltage MOSFETs have a wide drive type of 0.9 volts to 10 volts. This wide drive type range offers support for applications ranging from a small signal to high power. These MOSFETs come in a wide choice of sizes that are as small as the microminiature package (0604 sizes). This variety of sizes help to contribute to area space saving in an application. These MOSFETs offer superior high-speed switching and low On-Resistance.
Вес и габариты
channel mode:Enhancement
configuration:Dual
factory pack quantity: factory pack quantity:3000
150
+
Бонус: 3 !
Бонусная программа
Итого: 150
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Low-Gate Drive Voltage MOSFETsROHM Low-Gate Drive Voltage MOSFETs have a wide drive type of 0.9 volts to 10 volts. This wide drive type range offers support for applications ranging from a small signal to high power. These MOSFETs come in a wide choice of sizes that are as small as the microminiature package (0604 sizes). This variety of sizes help to contribute to area space saving in an application. These MOSFETs offer superior high-speed switching and low On-Resistance.
Вес и габариты
channel mode:Enhancement
configuration:Dual
factory pack quantity: factory pack quantity:3000
fall time:5.1 ns, 5.1 ns
forward transconductance - min:2.3 S, 2.3 S
id - continuous drain current:5.5 A
manufacturer:ROHM Semiconductor
maximum operating temperature:+150 C
minimum operating temperature:-55 C
mounting style:SMD/SMT
number of channels:2 Channel
package/case:HUML2020L-8
packaging:Reel, Cut Tape, MouseReel
part # aliases:UT6K3
pd - power dissipation:2 W
product category:MOSFET
product type:MOSFET
qg - gate charge:4 nC
rds on - drain-source resistance:30 mOhms, 30 mOhms
rise time:5.8 ns, 5.8 ns
subcategory:MOSFETs
technology:Si
transistor polarity:N-Channel
transistor type:2 N-Channel
typical turn-off delay time:13 ns, 13 ns
typical turn-on delay time:7.2 ns, 7.2 ns
vds - drain-source breakdown voltage:30 V
вес, г0.026
vgs - gate-source voltage:-12 V, +12 V
vgs th - gate-source threshold voltage:500 mV
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