Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Подробное описание

Вес и габариты
continuous drain current (id) @ 25в°c	1.3A
power dissipation-max (ta=25в°c)	1W
rds on - drain-source resistance	1.06О© @ 200mA,1.5V

62 ₽

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Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Вес и габариты
continuous drain current (id) @ 25в°c	1.3A
power dissipation-max (ta=25в°c)	1W
rds on - drain-source resistance	1.06О© @ 200mA,1.5V
transistor polarity	2 P Channel(Double)
vds - drain-source breakdown voltage	12V
vgs - gate-source voltage	1V @ 1mA

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Кнопки

US6J11TR