| Вес и габариты | |
| channel mode | Enhancement |
| configuration | Dual |
| factory pack quantity | 3000 |
| fall time | 55 ns, 55 ns |
| id - continuous drain current | 200 mA |
| manufacturer | ROHM Semiconductor |
| maximum operating temperature | +150 C |
| minimum operating temperature | -55 C |
| mounting style | SMD/SMT |
| number of channels | 2 Channel |
| package / case | SOT-363-6 |
| packaging | Cut Tape or Reel |
| part # aliases | UM6K33N |
| pd - power dissipation | 150 mW |
| product category | MOSFET |
| product type | MOSFET |
| rds on - drain-source resistance | 1.6 Ohms |
| rise time | 6 ns, 6 ns |
| series | UM6K33N |
| subcategory | MOSFETs |
| technology | Si |
| transistor polarity | N-Channel |
| transistor type | 2 N-Channel |
| typical turn-off delay time | 15 ns, 15 ns |
| typical turn-on delay time | 4 ns, 4 ns |
| vds - drain-source breakdown voltage | 50 V |
| вес, г | 0.005 |
| vgs - gate-source voltage | 8 V |
| vgs th - gate-source threshold voltage | 300 mV |