Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 1200 В 33A (Tc) 254,2 Вт (Tc) сквозное отверстие TO-247-4

Подробное описание

Основные
moisture sensitivity level (msl)	Not Applicable
mounting type	Through Hole
operating temperature	-55В°C ~ 175В°C (TJ)
package	Tube

3 240 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 1200 В 33A (Tc) 254,2 Вт (Tc) сквозное отверстие TO-247-4

Основные
moisture sensitivity level (msl)	Not Applicable
mounting type	Through Hole
operating temperature	-55В°C ~ 175В°C (TJ)
package	Tube
package / case	TO-247-4
eccn	EAR99
htsus	8541.29.0095
supplier device package	TO-247-4
Вес и габариты
technology	SiCFET (Cascode SiCJFET)
current - continuous drain (id) @ 25в°c	33A (Tc)
drain to source voltage (vdss)	1200V
drive voltage (max rds on, min rds on)	12V
fet type	N-Channel
gate charge (qg) (max) @ vgs	43nC @ 12V
input capacitance (ciss) (max) @ vds	1500pF @ 100V
power dissipation (max)	254.2W (Tc)
rds on (max) @ id, vgs	100mOhm @ 20A, 12V
vgs (max)	В±25V
vgs(th) (max) @ id	6V @ 10mA

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